# US 11,908,669 B2 · Thermally controlled magnetic fields optimization system for sputter deposition processes

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- Number: US 11,908,669 B2
- Document ID: US11908669B2
- Status: Granted
- Kind: B2
- Application number: 17/570,747
- Filed: 2022-01-07
- Published: 2022-07-14
- Granted: 2024-02-20
- Earliest claimed: 2021-01-08
- Assignees: Arizona Thin Film Research, LLC
- Applicants: Arizona Thin Film Research, LLC
- Inventors: Patrick Morse
- Web page: https://patentgrep.com/patent/US11908669B2

## CPC

- H01J 37/3461: {Means for shaping the magnetic field, e.g. magnetic shunts}
- C23C 14/3407: {Cathode assembly for sputtering apparatus, e.g. Target}
- C23C 14/35: by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)}
- H01F 7/02: Permanent magnets {[PM]}
- H01F 7/0273: {Magnetic circuits with PM for magnetic field generation}
- H01J 2237/002: Cooling arrangements
- H01J 2237/332: Coating
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES

## Abstract

The present disclosure provides systems and methods of controlling a magnetically confined plasma sputtering process using the waste heat transferred from the plasma into the target material and then into thermally controlled magnetic field adjustment assemblies that modify the strength of the plasma confinement magnetic fields on the target material.

## Claims

### Claim 1

A magnetic field control device for a plasma sputtering process, comprising:
at least one thermally controlled magnetic field assembly with at least one magnet that modifies a magnetic field strength of a plasma confining magnetic field on a sputtering surface of a target material based on a local temperature of cooling water directed proximate a specific magnet, the cooling water used to remove local thermal energy transferred to the target material from the plasma sputtering process; and
a housing structure containing the at least one thermally controlled magnetic field assembly that directs the cooling water to the specific magnet to deliver heated cooling water to thermally controlled magnetic field assembly for changing a local plasma intensity on the sputtering surface of the target material.

### Claim 2 (depends on 1)

The magnetic field control device of claim 1, wherein at least one phase change material controls the magnetic field strength.

### Claim 3 (depends on 1)

The magnetic field control device of claim 1, wherein a thermal hysteresis of the magnetic field control device is tuned to allow incremental magnetic field adjustment in one direction until a threshold temperature is achieved.

### Claim 4 (depends on 2)

The magnetic field control device of claim 2, wherein the at least one phase change material melts and fully expands at a temperature lower than a curie temperature of the at least one magnet.

### Claim 5 (depends on 2)

The magnetic field control device of claim 2, wherein the at least one phase change material melts and fully expands to stop the plasma sputtering process due to an increasing plasma impedance at a temperature lower than a critical temperature that damages at least one of the target material and a bonding layer.

### Claim 6 (depends on 1)

The magnetic field control device of claim 1, wherein at least one temperature sensor measures a target temperature and based on the target temperature, the magnetic field strength is modified with a mechanical mechanism.

### Claim 7 (depends on 1)

The magnetic field control device of claim 1, wherein at least one material property of the at least one magnet reversibly alters the magnetic field strength produced on a target material surface as a function of a magnet surface temperature.