# US 11,908,666 B2 · Stage and plasma processing apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,908,666 B2 - Document ID: US11908666B2 - Status: Granted - Kind: B2 - Application number: 17/883,264 - Filed: 2022-08-08 - Published: 2022-12-01 - Granted: 2024-02-20 - Earliest claimed: 2019-06-18 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Yasuharu Sasaki; Tsuguto Sugawara; Shin Yamaguchi; Hajime Tamura - Web page: https://patentgrep.com/patent/US11908666B2 ## CPC - H01J 37/32715: {Workpiece holder} - H01J 37/32091: {the radio frequency energy being capacitively coupled to the plasma} - H01J 37/32211: {Means for coupling power to the plasma} - H01J 37/32541: {Shape} - H01J 37/3255: {Material} - H01J 37/32568: {Relative arrangement or disposition of electrodes; moving means} - H01J 37/32642: {Focus rings} - H01J 37/32697: {Electrostatic control} - H10P 72/72: using electrostatic chucks - H10P 72/722: {Details of electrostatic chucks} - H10P 72/7606: {characterised by edge clamping, e.g. clamping ring} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode. ## Claims ### Claim 1 A plasma processing apparatus comprising: a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode. ### Claim 2 (depends on 1) The plasma processing apparatus according to claim 1, wherein the second power source is an RF power source. ### Claim 3 (depends on 1) The plasma processing apparatus according to claim 1, wherein at least one of the first power source and the second power source is a DC power source. ### Claim 4 (depends on 3) The plasma processing apparatus according to claim 3, wherein at least one of the first power source and the second power source is a negative pulsed DC power source. ### Claim 5 (depends on 1) The plasma processing apparatus according to claim 1, wherein the first bias electrode and the second clamping electrode are disposed at a same height in the electrostatic chuck. ### Claim 6 (depends on 1) The plasma processing apparatus according to claim 1, wherein the second bias electrode has a plurality of power supply terminals circumferentially disposed at equal distances. ### Claim 7 (depends on 1) The plasma processing apparatus according to claim 1, wherein the second clamping electrode includes a plurality of electrodes. ### Claim 8 An electrostatic chuck comprising: a dielectric portion having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; and a second bias electrode disposed below the second clamping electrode in the edge ring support portion. ### Claim 9 (depends on 8) The electrostatic chuck according to claim 8, wherein an RF voltage is applied to the second bias electrode. ### Claim 10 (depends on 8) The electrostatic chuck according to claim 8, wherein a DC voltage is applied to at least one of the first bias electrode and the second bias electrode. ### Claim 11 (depends on 10) The electrostatic chuck according to claim 10, wherein a negative pulsed DC voltage is applied to at least one of the first bias electrode and the second bias electrode. ### Claim 12 (depends on 8) The electrostatic chuck according to claim 8, wherein the first bias electrode and the second clamping electrode are disposed at a same height in the dielectric portion. ### Claim 13 (depends on 8) The electrostatic chuck according to claim 8, wherein the second bias electrode has a plurality of power supply terminals circumferentially disposed at equal distances. ### Claim 14 (depends on 8) The plasma processing apparatus according to claim 8, wherein the second clamping electrode includes a plurality of electrodes. ### Claim 15 A substrate support comprising: a base; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; and a second bias electrode disposed below the second clamping electrode in the edge ring support portion. ### Claim 16 (depends on 15) The substrate support according to claim 15, wherein an RF voltage is applied to the second bias electrode. ### Claim 17 (depends on 15) The substrate support according to claim 15, wherein a DC voltage is applied to at least one of the first bias electrode and the second bias electrode. ### Claim 18 (depends on 17) The substrate support according to claim 17, wherein a negative pulsed DC voltage is applied to at least one of the first bias electrode and the second bias electrode. ### Claim 19 (depends on 15) The substrate support according to claim 15, wherein the first bias electrode and the second clamping electrode are disposed at a same height in the electrostatic chuck. ### Claim 20 (depends on 15) The substrate support according to claim 15, wherein the second bias electrode has a plurality of power supply terminals circumferentially disposed at equal distances.