# US 11,908,663 B2 · Plasma processing apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,908,663 B2 - Document ID: US11908663B2 - Status: Granted - Kind: B2 - Application number: 17/299,430 - Filed: 2019-11-26 - Published: 2022-03-17 - Granted: 2024-02-20 - Earliest claimed: 2018-12-06 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Taro Ikeda; Toshifumi Kitahara - Web page: https://patentgrep.com/patent/US11908663B2 ## CPC - H01J 37/32568: {Relative arrangement or disposition of electrodes; moving means} - C23C 16/509: using internal electrodes - H01J 37/32082: {Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence)} - H01J 37/32449: {Gas control, e.g. control of the gas flow} - H05H 1/46: using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence) - H10P 50/242: {of Group IV materials} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H05H: PLASMA TECHNIQUE (apparatus or processes specially adapted for producing X-rays H05G2/00); PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Provided is a plasma processing apparatus capable of suppressing abnormal discharge. The plasma processing apparatus includes: an upper electrode and a lower electrode which are disposed inside a processing container so as to face each other inside the processing container; and a dielectric shower for gas introduction disposed below the upper electrode, wherein the plasma processing apparatus generates plasma in a space between the upper electrode and the lower electrode. The upper electrode includes: at least one slot configured to introduce VHF waves into the processing container; and a gas flow path provided independently of the at least one slot and in communication with the dielectric shower. ## Claims ### Claim 1 A plasma processing apparatus comprising: an upper electrode and a lower electrode which are disposed inside a processing container so as to face each other inside the processing container; and a dielectric shower for gas introduction disposed below the upper electrode, wherein the plasma processing apparatus generates a plasma in a space between the upper electrode and the lower electrode, and wherein the upper electrode includes: at least one slot configured to introduce VHF waves into the processing container; and a gas flow path provided independently of the at least one slot and in communication with the dielectric shower, wherein the at least one slot includes a plurality of slots and each of the plurality of slots extends in a circumferential direction of the upper electrode, and wherein the gas flow path is disposed between the slots located adjacent to each other in a radial direction of the upper electrode. ### Claim 2 (depends on 1) The plasma processing apparatus of claim 1, further comprising: a gas diffusion plate interposed between the gas flow path and the dielectric shower so as to diffuse a gas in the circumferential direction and the radial direction. ### Claim 3 (depends on 1) The plasma processing apparatus of claim 1, wherein the gas flow path includes: a first flow path configured to supply the gas to a central region of the dielectric shower; and a second flow path configured to supply the gas to a peripheral region of the dielectric shower. ### Claim 4 (depends on 1) The plasma processing apparatus of claim 1, further comprising: a metal film formed on an upper surface of the dielectric shower. ### Claim 5 (depends on 1) The plasma processing apparatus of claim 1, wherein one end of each of the plurality of slots is located radially more outward of the upper electrode than the other end. ### Claim 6 A plasma processing apparatus comprising: an upper electrode and a lower electrode which are disposed inside a processing container so as to face each other inside the processing container; and a dielectric shower for gas introduction disposed below the upper electrode, wherein the plasma processing apparatus generates a plasma in a space between the upper electrode and the lower electrode, and wherein the upper electrode includes: at least one slot configured to introduce VHF waves into the processing container; and a gas flow path provided independently of the at least one slot and in communication with the dielectric shower, wherein the at least one slot includes a plurality of slots, wherein each of the plurality of slots extends in a circumferential direction of the upper electrode, wherein one end of each of the plurality of slots is located radially more outward of the upper electrode than the other end, and wherein the gas flow path is disposed between the slots located adjacent to each other in a radial direction of the upper electrode.