# US 11,908,657 B2 · Scanning electron microscope device and electron beam inspection apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,908,657 B2 - Document ID: US11908657B2 - Status: Granted - Kind: B2 - Application number: 17/646,195 - Filed: 2021-12-28 - Published: 2023-01-05 - Granted: 2024-02-20 - Earliest claimed: 2021-07-01 - Assignees: Zhongke Jingyuan Electron Limited - Applicants: Zhongke Jingyuan Electron Limited - Inventors: Qinglang Meng; Weiqiang Sun - Web page: https://patentgrep.com/patent/US11908657B2 ## CPC - H01J 37/21: Means for adjusting the focus - G01N 23/2251: using incident electron beams, e.g. scanning electron microscopy [SEM] - H01J 37/141: Electromagnetic lenses - H01J 37/1477: {electrostatic} - H01J 37/263: {Contrast, resolution or power of penetration} - H01J 37/28: with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)} - H01J 2237/06375: Arrangement of electrodes - H01J 2237/141: Coils - H01J 2237/1415: Bores or yokes, i.e. magnetic circuit in general - H01J 2237/1516: Multipoles - H01J 2237/1534: Aberrations - H01J 2237/24475: Scattered electron detectors - H01J 2237/2448: Secondary particle detectors - H01J 2237/2817: Pattern inspection - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) ## Abstract A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending inward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a compensation electrode, which is located between the pole piece and the surface of the sample and is configured to adjust a focusing position of the electron beam at which the electron beam is focused, in a condition of excitation thereof with a voltage being applied thereon, by adjusting the voltage. ## Claims ### Claim 1 A scanning electron microscope device for a sample to be detected, which is configured to project an electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, comprising: an electron beam source configured to emit along an optical axis thereof the electron beam; a deflection mechanism, comprising: a first deflector located downstream of the electron beam source; and a second deflector located downstream of the first deflector, and an objective lens assembly, comprising: an excitation coil which is energized to create a magnetic field; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample, and comprises: a hollow body defining an internal chamber where the excitation coil is accommodated; and at least one inclined portion extending inward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece, wherein the deflection mechanism further comprises a compensation electrode in a form of a closed shape that is a curved surface profile that is centrally hollowed and centrally symmetric with respect to the optical axis, which compensation electrode is located between the pole piece and the surface of the sample and is configured to adjust a focusing position of the electron beam at which the electron beam is focused, in a condition of excitation thereof with a voltage being applied thereon, by adjusting the voltage, and wherein the curved surface profile includes a surface that is more proximate to the pole piece being constructed as a cambered surface having a uniform radius. ### Claim 2 (depends on 1) The scanning electron microscope device according to claim 1, wherein a magnitude of the voltage changes in real time with a change in a scanning position over which the electron beam scans, such that the electron beam is focused by a respective portion of the electric field through which a portion of the electron beam deviating from the optical axis passes, into a condition that the electron beam is in a constant in-focus condition across the surface of the sample. ### Claim 3 (depends on 2) The scanning electron microscope device according to claim 2, wherein the voltage floats at a higher voltage than that at the surface of the sample. ### Claim 4 (depends on 1) The scanning electron microscope device according to claim 1, wherein the compensation electrode is in a form of a planar ring shape. ### Claim 5 (depends on 1) The scanning electron microscope device according to claim 1, wherein an intersection point of the cambered surface intersecting with the optical axis is located at the surface of the sample. ### Claim 6 (depends on 1) The scanning electron microscope device according to claim 1, further comprising a third deflector located between the second deflector and the objective lens assembly and disposed in an opening delimited and circumscribed by the pole piece, and each of the first deflector, the second deflector and the third deflector is an electrostatic deflector. ### Claim 7 (depends on 1) The scanning electron microscope device according to claim 1, wherein each of the first deflector and the second deflector comprises a pair of electrodes provided opposite to each other and symmetrically relative to the optical axis, and is applied with respective electric excitation which is adjustable so as to adjust both direction and angle of the electron beam passing through the scanning electron microscope device. ### Claim 8 (depends on 1) The scanning electron microscope device according to claim 1, wherein each of the first deflector and the second deflector is in the form of 8-pole or 12-pole electrostatic deflector, and is applied with respective electric excitation which is adjustable so as to adjust both direction and angle of the electron beam passing through the scanning electron microscope device. ### Claim 9 (depends on 6) The scanning electron microscope device according to claim 6, wherein each of the first deflector, the second deflector and the third deflector comprises a pair of electrodes provided opposite to each other and symmetrically relative to the optical axis, and is applied with respective electric excitation which is adjustable so as to adjust both direction and angle of the electron beam passing through the scanning electron microscope device. ### Claim 10 (depends on 6) The scanning electron microscope device according to claim 6, wherein each of the first deflector, the second deflector and the third deflector is in the form of 8-pole or 12-pole electrostatic deflector, and is applied with respective electric excitation which is adjustable so as to adjust both direction and angle of the electron beam passing through the scanning electron microscope device. ### Claim 11 (depends on 10) The scanning electron microscope device according to claim 10, wherein the pole piece is an end of the inclined portion of the magnetic yoke substantially disposed parallel to the optical axis, and a length of each electrode of the third deflector is of the same order of magnitude as a thickness of the pole piece but is not smaller than the thickness of the pole piece. ### Claim 12 (depends on 6) The scanning electron microscope device according to claim 6, wherein the first deflector, the second deflector and the third deflector are arranged coaxially with each other or one another along the optical axis. ### Claim 13 (depends on 10) The scanning electron microscope device according to claim 10, wherein electrodes of the third deflector are arranged at a predetermined angle relative to electrodes of the first deflector, and the predetermined angle is set such that an off-axis aberration of the electron beam which is subject to deflection applied by the third deflector is minimized. ### Claim 14 (depends on 6) The scanning electron microscope device according to claim 6, wherein the third deflector is formed by a non-magnetizer material which is electrically conductive. ### Claim 15 (depends on 6) The scanning electron microscope device according to claim 6, wherein the inclined portion of the objective lens assembly defines an electron beam channel shrinking towards the sample, with a portion of the electron beam channel at the third deflector being a gap defined between the electrodes of the third deflector in a diameter direction thereof. ### Claim 16 (depends on 1) An electron beam inspection apparatus, comprising: the scanning electron microscope device according to claim 1; a first detector located downstream the sample and configured to detect backscattered electrons generated by the electron beam incident on the surface of the sample; and a second detector located downstream of the sample and configured to detect secondary electrons generated by the electron beam incident on the surface of the sample. ### Claim 17 (depends on 11) The scanning electron microscope device according to claim 11, wherein the length of each electrode of the third deflector is equal to the thickness of the pole piece. ### Claim 18 A scanning electron microscope device for a sample to be detected, which is configured to project an electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, comprising: an electron beam source configured to emit along an optical axis thereof the electron beam; a deflection mechanism, comprising: a first deflector comprising a pair of electrodes and located downstream of the electron beam source; and a second deflector located downstream of the first deflector, and an objective lens assembly, comprising: an excitation coil which is energized to create a magnetic field; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample, and comprises: a hollow body defining an internal chamber where the excitation coil is accommodated; and at least one inclined portion extending inward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece, and a third deflector comprising a pair of electrodes and located between the second deflector and the objective lens assembly and disposed in an opening delimited and circumscribed by the pole piece, wherein each of the first deflector, the second deflector and the third deflector is an electrostatic deflector, wherein the deflection mechanism further comprises a compensation electrode, which is located between the pole piece and the surface of the sample and is configured to adjust a focusing position of the electron beam at which the electron beam is focused, in a condition of excitation thereof with a voltage being applied thereon, by adjusting the voltage, and wherein: the pole piece is an end of the inclined portion of the magnetic yoke substantially disposed parallel to the optical axis, and a length of each electrode of the third deflector is of the same order of magnitude as a thickness of the pole piece but is not smaller than the thickness of the pole piece; or the electrodes of the third deflector are arranged at a predetermined angle relative to electrodes of the first deflector, and the predetermined angle is set such that an off-axis aberration of the electron beam which is subject to deflection applied by the third deflector is minimized.