# US 11,908,617 B2 · Broadband induction > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,908,617 B2 - Document ID: US11908617B2 - Status: Granted - Kind: B2 - Application number: 17/917,877 - Filed: 2021-04-15 - Published: 2023-04-20 - Granted: 2024-02-20 - Earliest claimed: 2020-04-17 - Assignees: 3D Glass Solutions, Inc. - Applicants: 3D Glass Solutions, Inc. - Inventors: Jeb H. Flemming; Reddy R. Vangala - Web page: https://patentgrep.com/patent/US11908617B2 ## CPC - H01F 17/0006: {Printed inductances (printed coils for dynamo-electric machines H02K3/26; printed circuits H05K)} - H01F 41/041: {Printed circuit coils (apparatus or processes for manufacturing printed circuits in general H05K3/00)} - C03C 15/00: Surface treatment of glass, not in the form of fibres or filaments, by etching (etching or surface-brightening compositions, in general C09K13/00) - C03C 23/007: {by thermal treatment} - H01F 17/0033: {with the coil helically wound around a magnetic core} - H03H 7/0153: {Electrical filters; Controlling thereof} - H03H 7/06: including resistors (H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence) - H03H 7/1758: {Series LC in shunt or branch path (H03H7/1791 takes precedence)} - H01F 2017/0073: {with a special conductive pattern, e.g. flat spiral} - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - C03C: CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS - H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P) ## Abstract The present invention includes a method of a low cost, reliable novel broadband inductor that can be used with a capacitor to form a broadband filter. ## Claims ### Claim 1 A method of producing a broadband inductor comprising: forming first trenches on a first side of a substrate of a conical inductor and filling the first trenches with a conductive material; forming first and second vias through the substrate that connect to a first end and a second end, respectively, of each of the first trenches and filling the first and second vias with a conductive material; and forming second trenches on a second side of the substrate opposite the first side, and filling the second trenches with a conductive material, wherein each of the second trenches connects the first and second vias in a conical shape, and wherein the first and second trenches are the broadband inductor. ### Claim 2 (depends on 1) The method of claim 1, wherein the substrate is a photosensitive glass substrate and the step of forming the first trenches and the step of forming the second trenches each comprises: forming a photoresist with a trench pattern on the substrate; exposing at least one portion of the photosensitive glass substrate to an activating energy source; heating the photosensitive glass substrate a first time for at least ten minutes above a glass transition temperature thereof; cooling the photosensitive glass substrate a first time to transform at least part of the exposed glass substrate to a crystalline material to form a glass-crystalline substrate; etching the first or second trenches in the glass-crystalline substrate with an etchant; flood exposing a region outside of the etched first or second trenches of the photosensitive glass substrate to the activating energy source; heating the photosensitive glass substrate a second time for at least ten minutes above the glass transition temperature thereof; cooling the photosensitive glass substrate a second time to transform the exposed glass substrate to a crystalline material to form a glass-crystalline substrate; and selectively filling the first and second trenches with a conductive material ground plane and input and output channels with one or more metals, wherein the one or more metals are connected to a circuitry. ### Claim 3 (depends on 1) The method of claim 1, wherein the substrate is a photosensitive glass substrate and the step of forming the first vias and the step of forming the second vias from the first to the second side each comprises: forming a photoresist with a via pattern on the substrate; exposing at least one portion of the photosensitive glass substrate to an activating energy source; heating the photosensitive glass substrate a first time for at least ten minutes above a glass transition temperature thereof; cooling the photosensitive glass substrate a first time to transform at least part of the exposed glass to a crystalline material to form a glass-crystalline substrate; etching the first or second vias in the glass-crystalline substrate with an etchant; flood exposing a region outside of the etched first or second vias of the photosensitive glass substrate to the activating energy source; heating the photosensitive glass substrate a second time for at least ten minutes above the glass transition temperature thereof; cooling the photosensitive glass/ceramic substrate a second time to transform the exposed glass to a crystalline material to form a glass-crystalline substrate; and selectively filling the first and second vias with a conductive material. ### Claim 4 (depends on 1) The method of claim 1, wherein the substrate is a photosensitive glass. ### Claim 5 (depends on 1) The method of claim 1, wherein via and trench spacing is from 10 μm to 250 μm. ### Claim 6 (depends on 1) The method of claim 1, wherein a via diameter is from 5 μm to 200 μm. ### Claim 7 (depends on 1) The method of claim 1, wherein a via height or a trench height is from 25 μm to 1000 μm. ### Claim 8 (depends on 1) The method of claim 1, wherein the broadband inductor comprises a high frequency and low frequency section. ### Claim 9 (depends on 1) The method of claim 1, wherein the broadband inductor comprises two semiconductor substrates. ### Claim 10 (depends on 1) The method of claim 1, wherein the broadband inductor comprises one semiconductor substrate. ### Claim 11 (depends on 1) The method of claim 1, wherein the broadband inductor is not rectangular. ### Claim 12 (depends on 1) The method of claim 1, wherein the broadband inductor comprises a cavity filled with a ferrite material. ### Claim 13 (depends on 1) The method of claim 1, wherein the broadband inductor further comprises one or more electrical components selected from resistors, connectors, or capacitors, that form a circuit. ### Claim 14 (depends on 1) The method of claim 1, wherein the broadband inductor is bonded to a circuit board. ### Claim 15 A method of producing a broadband inductor comprising: forming first trenches on a first side of a photosensitive glass substrate of a conical inductor and filling the first trenches with a conductive material, by: forming first and second vias through the photosensitive glass substrate that connect to a first end and a second end, respectively, of each of the first trenches and filling the first and second vias with a conductive material; and forming second trenches on a second side of the photosensitive glass substrate opposite the first side, and filling the second trenches with a conductive material, wherein each of the second trenches connects the first and second vias in a conical shape, and wherein the first and second trenches are the broadband inductor. ### Claim 16 (depends on 15) The method of claim 15, wherein the of forming the first trenches and the step of forming the second trenches each comprises: forming a photoresist with a trench pattern on the substrate; exposing at least one portion of the photosensitive glass substrate to an activating energy source; heating the photosensitive glass substrate a first time for at least ten minutes above a glass transition temperature thereof; cooling the photosensitive glass substrate a first time to transform at least part of the exposed glass substrate to a crystalline material to form a glass-crystalline substrate; etching the first or second trenches in the glass crystalline substrate with an etchant; flood exposing a region outside of the etched first or second trenches of the photosensitive glass substrate to the activating energy source; heating the photosensitive glass substrate a second time for at least ten minutes above the glass transition temperature thereof; cooling the photosensitive glass substrate a second time to transform the exposed glass substrate to a crystalline material to form a glass-crystalline substrate; and selectively filling the trenches with a conductive material ground plane and input and output channels with one or more metals, wherein the one or more metals are connected to a circuitry. ### Claim 17 (depends on 15) The method of claim 15, wherein the step of forming the first vias and the step of forming the second vias from the first to the second side each comprises: forming a photoresist with a via pattern on the substrate; exposing at least one portion of the photosensitive glass substrate to an activating energy source; heating the photosensitive glass substrate a first time for at least ten minutes above a glass transition temperature thereof; cooling the photosensitive glass substrate a first time to transform at least part of the exposed glass to a crystalline material to form a glass-crystalline substrate; etching the first or second vias, respectively, with an etchant; flood exposing a region outside of the etched first or second vias respectively, of the photosensitive glass substrate to the activating energy source; heating the photosensitive glass substrate a second time for at least ten minutes above the glass transition temperature thereof; cooling the photosensitive glass substrate a second time to transform the exposed glass to a crystalline material to form a glass-crystalline substrate; and selectively filling the first and second vias with a conductive material. ### Claim 18 (depends on 15) The method of claim 15, wherein via and trench spacing is from 10 μm to 250 μm. ### Claim 19 (depends on 15) The method of claim 15, wherein a via diameter is from 5 μm to 200 μm. ### Claim 20 (depends on 15) The method of claim 15, wherein a via height or a trench height is from 25 μm to 1000 μm. ### Claim 21 (depends on 15) The method of claim 15, wherein the broadband inductor comprises a high frequency and low frequency section. ### Claim 22 (depends on 15) The method of claim 15, wherein the broadband inductor comprises two semiconductor substrates. ### Claim 23 (depends on 15) The method of claim 15, wherein the broadband inductor comprises one semiconductor substrate. ### Claim 24 (depends on 15) The method of claim 15, wherein the broadband inductor is not rectangular. ### Claim 25 (depends on 15) The method of claim 15, wherein the broadband inductor comprises a cavity filled with a ferrite material. ### Claim 26 (depends on 15) The method of claim 15, wherein the broadband inductor further comprises one or more electrical components selected from resistors, connectors, or capacitors, that form a circuit. ### Claim 27 (depends on 15) The method of claim 15, wherein the broadband inductor is bonded to a circuit board.