# US 11,908,496 B2 · BiSbX (012) layers having increased operating temperatures for SOT and MRAM devices

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- Number: US 11,908,496 B2
- Document ID: US11908496B2
- Status: Granted
- Kind: B2
- Application number: 18/082,721
- Filed: 2022-12-16
- Published: 2023-04-20
- Granted: 2024-02-20
- Earliest claimed: 2021-08-18
- Assignees: Western Digital Technologies, Inc.
- Applicants: Western Digital Technologies, Inc.
- Inventors: Quang Le; Brian R. York; Cherngye Hwang; Susumu Okamura; Xiaoyong Liu; Kuok San Ho; Hisashi Takano
- Web page: https://patentgrep.com/patent/US11908496B2

## CPC

- G11B 5/3909: {Arrangements using a magnetic tunnel junction}
- G11B 5/313: {Disposition of layers}
- G11B 5/314: {where the layers are extra layers normally not provided in the transducing structure, e.g. optical layers (G11B5/3196 takes precedence)}
- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- H01F 10/30: characterised by the composition of the intermediate layers {, e.g. seed, buffer, template, diffusion preventing, cap layers (H01F10/06 and H01F10/32 take precedence)}
- H01F 10/3254: {the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]}
- H01F 10/329: {Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect}
- H10B 61/00: Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10N 50/10: Magnetoresistive devices
- H10N 50/80: Constructional details
- H10N 50/85: Materials of the active region
- H10N 52/00: Hall-effect devices (integrated devices or assemblies of multiple devices H10N59/00)
- H10N 52/80: Constructional details
- G11B 5/39: using magneto-resistive devices {or effects}
- G11B: INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K1/18; circuits for coupling output of reproducer to radio receiver H04B1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R)
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H10B: ELECTRONIC MEMORY DEVICES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

The present disclosure generally relate to spin-orbit torque (SOT) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.

## Claims

### Claim 1

A spin-orbit torque (SOT) device, comprising:
a topological insulator (TI) modulation multilayer, the TI modulation multilayer comprising an alternating stack, the alternating stack repeating one or more times, wherein the alternating stack comprises:
one or more texturing layers; and
one or more TI lamellae layers comprising BiSb and clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material.

### Claim 2 (depends on 1)

The SOT device of claim 1, wherein the BiSb of the one or more TI lamellae layers has a crystal orientation of (012), and wherein the clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. at a grain boundary with a bulk melting temperature less than about 1400° C.

### Claim 3 (depends on 1)

The SOT device of claim 1, wherein:
the carbide is selected from the group consisting of: ScC, TiC, NbC, ZrC, HfC, TaC, WC, SiC, and composite combinations thereof with one or more elements selected from the group consisting of: W, Al, and Si,
the oxide is selected from the group consisting of: FeO, CoC, ZrO, MgO, TiO, ZnO, and composite combinations thereof with one or more elements selected from the group consisting of: W, Al, and Si,
the nitride is selected from the group consisting of: ScN, TiN, NbN, ZrN, HfN, TaN, GaN, FeN, and composite combinations thereof with one or more elements selected from the group consisting of: W, Al, and Si, and
wherein the composite ceramic material is selected from the group consisting of: Bi, Pb, Ga, Sc, Ti, V, Cr, Mn, Fe, Zr, Nb, Mo, In, Ir, Ru, V, Os, Rh, Pd, WV, CrV, CrNb, Ge, ZnNb, ZnTa, Co, Mg, Sn, Sb, Te, Hf, Ta, W, oxides thereof, nitrides thereof, carbides thereof, and alloys thereof.

### Claim 4 (depends on 1)

The SOT device of claim 1, wherein the TI modulation multilayer further comprises one or more bismuth (Bi) or bismuth-rich bismuth antimony (BiSb) composition modulation layers comprising bismuth in an atomic percent of greater than or equal to about 96%.

### Claim 5 (depends on 4)

The SOT device of claim 4, wherein the alternating stack comprises:
a first TI lamellae layer of the one or more TI lamellae layers; and
a first texturing layer of the one or more texturing layers disposed in contact with the first TI lamellae layer, wherein the alternating stack is disposed on a first Bi or BiSb composition modulation layer of the one or more Bi or BiSb composition modulation layers such that the first TI lamellae layer is disposed in contact with the first Bi or BiSb composition modulation layer.

### Claim 6 (depends on 4)

The SOT device of claim 4, wherein the alternating stack comprises:
a first Bi or BiSb composition modulation layer of the one or more Bi or BiSb composition modulation layers;
a first TI lamellae layer of the one or more TI lamellae layers disposed on the first Bi or BiSb composition modulation layer;
a second Bi or BiSb composition modulation layer of the one or more Bi or BiSb composition modulation layers disposed on the first TI lamellae layer; and
a first texturing layer of the one or more texturing layer disposed on the second Bi or Bi Sb composition modulation layer.

### Claim 7 (depends on 1)

The SOT device of claim 1, wherein the one or more TI lamellae layers are co-deposited with the clusters of atoms in a modulated orientation.

### Claim 8 (depends on 1)

The SOT device of claim 1, wherein the one or more TI lamellae layers are co-deposited with the clusters of atoms in an edge orientation.

### Claim 9 (depends on 1)

The SOT device of claim 1, wherein the one or more TI lamellae layers are co-deposited with the clusters of atoms in a uniformly or non-uniformly distributed orientation.

### Claim 10

A magnetic recording device comprising a magnetic recording head, the magnetic recording head comprising:
a spin-orbit torque (SOT) device, comprising:
a topological insulator (TI) modulation multilayer, the TI modulation multilayer comprising an alternating stack, the alternating stack repeating one or more times, wherein the alternating stack comprises:
one or more texturing layers; and
one or more TI lamellae layers comprising BiSb and clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material.

### Claim 11

A magneto-resistive memory comprising:
a spin-orbit torque (SOT) device, comprising:
a topological insulator (TI) modulation multilayer, the TI modulation multilayer comprising an alternating stack, the alternating stack repeating one or more times, wherein the alternating stack comprises:
one or more texturing layers; and
one or more TI lamellae layers comprising BiSb and clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material.

### Claim 12

A spin-orbit torque (SOT) device, comprising:
a topological insulator (TI) modulation multilayer, the TI modulation multilayer comprising:
two or more bismuth (Bi) or bismuth-rich bismuth antimony (BiSb) composition modulation layers comprising bismuth in an atomic percent greater than or equal to about 96%;
a plurality of TI lamellae layers comprising BiSb having a crystal orientation of (012) and clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material; and
one or more texturing layers.

### Claim 13 (depends on 12)

The SOT device of claim 12, wherein a first TI lamellae layer of the plurality of TI lamellae layers is disposed in contact with a first Bi or BiSb composition modulation layer of the two or more Bi or BiSb composition modulation layers and a first texturing layer of the one or more texturing layers.

### Claim 14 (depends on 12)

The SOT device of claim 12, wherein a first TI lamellae layer of the plurality of TI lamellae layers is disposed in contact with a first texturing layer of the one or more texturing layers and a second texturing layer of the one or more texturing layers.

### Claim 15 (depends on 12)

The SOT device of claim 12, wherein a first TI lamellae layer of the plurality of TI lamellae layers is disposed in contact with a first Bi or BiSb composition modulation layer of the two or more Bi or BiSb composition modulation layers and a second Bi or BiSb composition modulation layer of the two or more Bi or BiSb composition modulation layers.

### Claim 16 (depends on 12)

The SOT device of claim 12, wherein a first texturing layer of the one or more texturing layers is disposed in contact with a first Bi or BiSb composition modulation layer of the two or more Bi or BiSb composition modulation layers and a second Bi or BiSb composition modulation layer of the two or more Bi or BiSb composition modulation layers.

### Claim 17

A magnetic recording device comprising a magnetic recording head, the magnetic recording head comprising:
a spin-orbit torque (SOT) device, comprising:
a topological insulator (TI) modulation multilayer, the TI modulation multilayer comprising:
two or more bismuth (Bi) or bismuth-rich bismuth antimony (BiSb) composition modulation layers comprising bismuth in an atomic percent greater than or equal to about 96%;
a plurality of TI lamellae layers comprising BiSb having a crystal orientation of (012) and clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material; and
one or more texturing layers.

### Claim 18

A magneto-resistive memory comprising:
a spin-orbit torque (SOT) device, comprising:
a topological insulator (TI) modulation multilayer, the TI modulation multilayer comprising:
two or more bismuth (Bi) or bismuth-rich bismuth antimony (BiSb) composition modulation layers comprising bismuth in an atomic percent greater than or equal to about 96%;
a plurality of TI lamellae layers comprising BiSb having a crystal orientation of (012) and clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material; and
one or more texturing layers.

### Claim 19

A spin-orbit torque (SOT) device, comprising:
a topological insulator (TI) modulation multilayer, the TI modulation multilayer comprising:
a plurality of bismuth (Bi) or bismuth-rich bismuth antimony (BiSb) composition modulation layers comprising bismuth in an atomic percent of about 96% to about 100%; and
one or more alternating stacks, the one or more alternating stacks comprising:
a first TI lamellae layer comprising BiSb having a crystal orientation of (012) and clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material; and
a first texturing layer disposed over the first TI lamellae layer, the first texturing layer being selected from the group consisting of: an amorphous material comprising covalently bonded carbide, oxide, or nitride, a face centered cubic (fcc) material, a tetragonal material, a body centered cubic (bcc) material, and a metallic amorphous material.

### Claim 20 (depends on 19)

The SOT device of claim 19, wherein the first texturing layer is disposed on and in contact with the first TI lamellae layer.

### Claim 21 (depends on 20)

The SOT device of claim 20, wherein the one or more alternating stacks are disposed between a first Bi or BiSb composition modulation layer of the plurality of Bi or BiSb composition modulation layers and a second Bi or BiSb composition modulation layer of the plurality of Bi or BiSb composition modulation layers.

### Claim 22 (depends on 19)

The SOT device of claim 19, wherein the one or more alternating stacks further comprise a first Bi or BiSb composition modulation layer of the plurality of Bi or BiSb composition modulation layers and a second Bi or BiSb composition modulation layer of the plurality of Bi or BiSb composition modulation layers, and wherein the first TI lamellae layer is disposed on the first Bi or BiSb composition modulation layer, the second Bi or BiSb composition modulation layer is disposed on the first TI lamellae layer, and the first texturing layer is disposed on the second Bi or BiSb composition modulation layer.

### Claim 23 (depends on 19)

The SOT device of claim 19, further comprising:
a buffer layer; and
an interlayer disposed over the buffer layer, wherein the TI modulation multilayer is disposed between and in contact with the buffer layer and the interlayer.

### Claim 24

A magnetic recording device comprising a magnetic recording head, the magnetic recording head comprising:
a spin-orbit torque (SOT) device, comprising:
a topological insulator (TI) modulation multilayer, the TI modulation multilayer comprising:
a plurality of bismuth (Bi) or bismuth-rich bismuth antimony (BiSb) composition modulation layers comprising bismuth in an atomic percent of about 96% to about 100%; and
one or more alternating stacks, the one or more alternating stacks comprising:
a first TI lamellae layer comprising BiSb having a crystal orientation of (012) and clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material; and
a first texturing layer disposed over the first TI lamellae layer, the first texturing layer being selected from the group consisting of:
an amorphous material comprising covalently bonded carbide, oxide, or nitride, a face centered cubic (fcc) material, a tetragonal material, a body centered cubic (bcc) material, and a metallic amorphous material.

### Claim 25

A magneto-resistive memory comprising:
a spin-orbit torque (SOT) device, comprising:
a topological insulator (TI) modulation multilayer, the TI modulation multilayer comprising:
a plurality of bismuth (Bi) or bismuth-rich bismuth antimony (BiSb) composition modulation layers comprising bismuth in an atomic percent of about 96% to about 100%; and
one or more alternating stacks, the one or more alternating stacks comprising:
a first TI lamellae layer comprising BiSb having a crystal orientation of (012) and clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material; and
a first texturing layer disposed over the first TI lamellae layer, the first texturing layer being selected from the group consisting of:
an amorphous material comprising covalently bonded carbide, oxide, or nitride, a face centered cubic (fcc) material, a tetragonal material, a body centered cubic (bcc) material, and a metallic amorphous material.