# US 11,907,491 B2 · Sensing unit and sensing device

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- Number: US 11,907,491 B2
- Document ID: US11907491B2
- Status: Granted
- Kind: B2
- Application number: 17/956,663
- Filed: 2022-09-29
- Published: 2023-12-28
- Granted: 2024-02-20
- Earliest claimed: 2022-06-28
- Assignees: Shanghai Tianma Micro-Electronics Co., Ltd.
- Applicants: Shanghai Tianma Micro-Electronics Co., Ltd.
- Inventors: Shun Gong; Linzhi Wang; Kerui Xi; Jiansheng Zhong
- Web page: https://patentgrep.com/patent/US11907491B2

## CPC

- G06F 3/0448: {Details of the electrode shape, e.g. for enhancing the detection of touches, for generating specific electric field shapes, for enhancing display quality}
- G06F 3/0412: {Digitisers structurally integrated in a display}
- G06F 3/0443: {using a single layer of sensing electrodes}
- G06F 3/0446: {using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes}
- G06V 40/1306: {non-optical, e.g. ultrasonic or capacitive sensing}
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- G06V: IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING

## Abstract

A sensing unit and a sensing device are provided. The sensing unit includes a substrate; a plurality of thin-film transistors and a plurality of sensing electrodes disposed on a side of the substrate; and a ring electrode disposed on a first electrode layer. The first electrode layer is located on a side of a thin-film transistor of the plurality of thin-film transistors away from the substrate. The plurality of sensing electrodes are disposed on the first electrode layer, and the ring electrode is disposed around the plurality of sensing electrodes.

## Claims

### Claim 1

A sensing unit, comprising:
a substrate;
a plurality of thin-film transistors and a plurality of sensing electrodes disposed on a side of the substrate; and
a ring electrode disposed in a first electrode layer, wherein the first electrode layer is located on a side of a thin-film transistor of the rituality of thin-film transistors away from the substrate,
wherein the plurality of sensing electrodes disposed in the first electrode layer, and the ring electrode is disposed around the plurality of sensing electrodes and does not overlap the sensing electrodes in a direction perpendicular to the substrate.

### Claim 2 (depends on 1)

The sensing unit according to claim 1, wherein:
the ring electrode is provided with a constant potential.

### Claim 3 (depends on 1)

The sensing unit according to claim 1, wherein:
the first electrode layer also includes a first sub-section; and
in the direction perpendicular to the substrate, the first sub-section at least partially overlaps the thin-film transistor.

### Claim 4 (depends on 3)

The sensing unit according to claim 3, wherein:
the first sub-section is electrically connected to the ring electrode.

### Claim 5 (depends on 1)

The sensing unit according to claim 1, wherein:
a material of the first electrode layer includes at least one of indium tin oxide and metal molybdenum.

### Claim 6 (depends on 3)

The sensing unit according to claim 3, wherein:
a source and a drain of the thin-film transistor are located in a first metal layer;
the first metal layer further includes a second sub-section, the second sub-section and the source of the thin-film transistor are insulated from each other, and the second sub-section and the drain of the thin-film transistor are insulated from each other; and
in the direction perpendicular to the substrate, the second sub-section at least partially overlaps the sensing electrode.

### Claim 7 (depends on 6)

The sensing unit according to claim 6, wherein:
the second sub-section is provided with a constant potential.

### Claim 8 (depends on 1)

The sensing unit according to claim 1, wherein:
a gate of the thin-film transistor is located in a second metal layer, the second metal layer further includes a third sub-section, and the third sub-section is insulated from the gate of the thin-film transistor; and
in the direction perpendicular to the substrate, the third sub-section at least partially overlaps the sensing electrode.

### Claim 9 (depends on 8)

The sensing unit according to claim 8, wherein:
the third sub-section is provided with a constant potential.

### Claim 10 (depends on 1)

The sensing unit according to claim 1, further comprising:
a third metal layer, disposed between the substrate and the plurality of thin-film transistors.

### Claim 11 (depends on 10)

The sensing unit according to claim 10, wherein:
a material of the third metal layer includes at least one of molybdenum and aluminum.

### Claim 12 (depends on 10)

The sensing unit according to claim 10, wherein:
in the direction perpendicular to the substrate, the third metal layer overlaps both the thin-film transistor and the sensing electrode.

### Claim 13 (depends on 10)

The sensing unit according to claim 10, wherein:
the third metal layer is provided with a constant potential.

### Claim 14 (depends on 1)

The sensing unit according to claim 1, wherein:
a thin-film transistor of the plurality of thin-film transistors includes a gate, a source, a drain and an active layer;
the source and the drain are electrically connected to the active layer through a via hole; and
a material of the active layer includes low temperature polysilicon.

### Claim 15

A sensing device, comprising:
a sensing unit, including a substrate; a plurality of thin-film transistors and a plurality of sensing electrodes disposed on a side of the substrate; and a ring electrode disposed in a first electrode layer, wherein the first electrode layer is located on a side of a thin-film transistor of the plurality of thin-film transistors away from the substrate, the plurality of sensing electrodes are disposed in the first electrode layer, and the ring electrode is disposed around the plurality of sensing electrodes and does not overlap the sensing electrodes in a direction perpendicular to the substrate;
a driving circuit; and
a signal reading circuit,
wherein:
a gate of the thin-film transistor is electrically connected to the driving circuit through a gate line;
a source of the thin-film transistor is electrically connected to the signal reading circuit through a data line; and
the gate line intersects the data line.

### Claim 16 (depends on 15)

The sensing device according to claim 15, wherein:
at least one ring electrode is disposed between any two sensing electrodes of the plurality of sensing electrodes.

### Claim 17 (depends on 15)

The sensing device according to claim 15, wherein:
at least two ring electrodes are electrically connected to each other.

### Claim 18 (depends on 15)

The sensing device according to claim 15, wherein:
in the direction perpendicular to the substrate, the ring electrode and the data line at least partially overlap.