# US 11,906,900 B2 · Chemically amplified positive photoresist composition for improving pattern profile

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- Number: US 11,906,900 B2
- Document ID: US11906900B2
- Status: Granted
- Kind: B2
- Application number: 15/734,140
- Filed: 2019-05-22
- Published: 2021-07-15
- Granted: 2024-02-20
- Earliest claimed: 2018-06-18
- Assignees: Young Chang Chemical Co., Ltd
- Applicants: Young Chang Chemical Co., Ltd
- Inventors: Su Jin Lee; Young Cheol Choi; Seung Hun Lee; Seung Hyun Lee
- Web page: https://patentgrep.com/patent/US11906900B2

## CPC

- G03F 7/0392: {the macromolecular compound being present in a chemically amplified positive photoresist composition}
- G03F 7/0045: {with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors}
- G03F 7/0397: {the macromolecular compound having an alicyclic moiety in a side chain}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

Proposed is a photoresist composition for a KrF light source, which exhibits a vertical profile compared to conventional KrF positive photoresists by adding a resin capable of increasing transmittance in order to form a semiconductor pattern, particularly a chemically amplified positive photoresist composition for improving a pattern profile, which includes, based on the total weight of the composition, 5 to 60 wt % of a polymer resin, 0.1 to 10 wt % of a transmittance-increasing resin additive represented by Chemical Formula 1, 0.05 to 10 wt % of a photoacid generator, 0.01 to 5 wt % of an acid diffusion inhibitor, and the remainder of a solvent, thus making it possible to provide a composition exhibiting a vertical profile, enhanced sensitivity and a superior processing margin compared to conventional positive photoresists.

## Claims

### Claim 1

A chemically amplified positive photoresist composition for improving a pattern profile, suitable for use in a photoresist enabling exposure using a light source having a wavelength of 248 nm, comprising, based on a total weight of the composition, 5 to 60 wt % of a polymer resin, 0.1 to 10 wt % of a transmittance-increasing resin additive consisting of Chemical Formula 1 below, 0.05 to 10 wt % of a photoacid generator, 0.01 to 5 wt % of an acid diffusion inhibitor, and a remainder of a solvent:
wherein a, b, c, and d are molar ratios of repeating units constituting a copolymer and are each 1 to 9, in which R1, R2, and R3 are at least one selected from among methyl (R—CH3), ethyl (R—CH2CH3), propyl (R—CH2CH2CH3), butyl (R—CH2CH2CH2CH3) and combinations thereof, and are different from each other, R being a binding site, and
wherein the polymer resin is at least one selected from the group consisting of hydroxyl-group-containing phenol polymer resins represented by Chemical Formula 2 to Chemical Formula 5 below:
[Chemical Formula 2]
resin comprising
repeating units,
wherein R4 is any one structure selected from among structures represented by Chemical Formula a to Chemical Formula p below, and R is a binding site,
[Chemical Formula 3]
resin comprising
repeating units,
wherein R5 is identical to R4 and is any one structure selected from among structures represented by Chemical Formula a to Chemical Formula p,
[Chemical Formula 4]
resin comprising
repeating units,
wherein R6 and R7 are one or more structures selected from among structures represented by Chemical Formula a to Chemical Formula p, and
[Chemical Formula 5]
resin comprising
repeating units,
wherein R8 and R9 are one or more structures selected from among structures represented by Chemical Formula a to Chemical Formula p.

### Claim 2 (depends on 1)

The chemically amplified positive photoresist composition of claim 1, wherein the transmittance-increasing resin additive represented by Chemical Formula 1 has a weight average molecular weight of 2,000 to 20,000.

### Claim 3 (depends on 1)

The chemically amplified positive photoresist composition of claim 1, wherein the photoacid generator comprises at least one selected from the group consisting of triphenylsulfonium triflate, triphenylsulfonium antimonate, diphenyliodonium triflate, diphenyliodonium antimonate, methoxydiphenyliodonium triflate, 2,6-dinitrobenzylsulfonate, pyrogallol tris(alkyl sulfonate), norbornene dicarboxyimide triflate, triphenylsulfonium nonaflate, diphenyliodonium nonaflate, methoxydiphenyliodonium nonaflate, N-hydroxysuccinimide nonaflate, norbornene dicarboxyimide nonaflate, triphenylsulfonium perfluorooctane sulfonate, diphenyliodonium perfluorooctane sulfonate, methoxydiphenyliodonium perfluorooctane sulfonate, N-hydroxysuccinimide perfluorooctane sulfonate, and norbornene dicarboxyimide perfluorooctane sulfonate.

### Claim 4 (depends on 1)

The chemically amplified positive photoresist composition of claim 1, wherein the acid diffusion inhibitor comprises at least one selected from the group consisting of dimethylamine, diethylamine, trimethylamine, triethylamine, tributylamine, dimethanolamine, diethanolamine, trimethanolamine, triethanolamine, and tributanolamine.