# US 11,906,897 B2 · Method for extreme ultraviolet lithography mask treatment

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- Number: US 11,906,897 B2
- Document ID: US11906897B2
- Status: Granted
- Kind: B2
- Application number: 17/350,685
- Filed: 2021-06-17
- Published: 2021-10-07
- Granted: 2024-02-20
- Earliest claimed: 2018-04-18
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Pei-Cheng Hsu; Yih-Chen Su; Chi-Kuang Tsai; Ta-Cheng Lien; Tzu Yi Wang; Jong-Yuh Chang; Hsin-Chang Lee
- Web page: https://patentgrep.com/patent/US11906897B2

## CPC

- G03F 1/24: Reflection masks; Preparation thereof
- G03F 1/26: Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F 1/54: Absorbers, e.g. of opaque materials
- G03F 1/80: Etching
- G03F 1/82: Auxiliary processes, e.g. cleaning or inspecting
- G03F 1/84: Inspecting
- G03F 7/70433: {Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors}
- G03F 7/70466: {Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature (stitching G03F7/70475)}
- H10P 50/20: Dry etching; Plasma etching; Reactive-ion etching
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A reflective mask includes a reflective multilayer over a substrate, a capping layer over the reflective multilayer, an absorber layer over the capping layer and including a top surface, and a protection layer directly on the top surface of the absorber layer. The absorber layer is formed of a first material and the protection layer is formed of a second material that is less easily to be oxidized than the first material.

## Claims

### Claim 1

A reflective mask, comprising:
a substrate; and
a first stack of multiple layers disposed over the substrate and comprising:
a first reflective multilayer over the substrate,
a first capping layer over the first reflective multilayer,
a first absorber layer over the first capping layer, wherein the first absorber layer includes a first material and comprises a top surface, and
a first protection layer disposed directly on the top surface of the first absorber layer and includes a second material,
wherein a ratio of nitrogen to tantalum (N/Ta) in the first protection layer is greater than or equal to 1.25.

### Claim 2 (depends on 1)

The reflective mask of claim 1, wherein the first stack of multiple layers further comprises:
a second absorber layer over the first capping layer and spaced apart from the first absorber layer by a first trench; and
a second protection layer disposed directly on a top surface of the second absorber layer,
wherein the second absorber layer comprises the first material, and the second protection layer comprises the second material.

### Claim 3 (depends on 2)

The reflective mask of claim 2, further comprising:
a second stack of multiple layers comprising:
a second reflective multilayer disposed over the substrate;
a second capping layer disposed over the second reflective multilayer; and
a third absorber layer disposed over the second capping layer,
wherein the first stack of multiple layers is spaced apart from the second stack of multiple layers by a second trench.

### Claim 4 (depends on 3)

The reflective mask of claim 3, wherein a depth of the second trench is greater than a depth of the first trench.

### Claim 5 (depends on 1)

The reflective mask of claim 1, wherein a nitrogen concentration of the second material is greater than a nitrogen concentration of the first material.

### Claim 6 (depends on 1)

The reflective mask of claim 1, wherein the first material comprises tantalum boride.

### Claim 7 (depends on 1)

The reflective mask of claim 1, further comprising:
a second protection layer extending along a sidewall surface of the first absorber layer and includes the second material.

### Claim 8 (depends on 7)

The reflective mask of claim 7, wherein a nitrogen concentration of the second protection layer is less than a nitrogen concentration of the first protection layer.

### Claim 9 (depends on 7)

The reflective mask of claim 7, wherein a thickness of the second protection layer is less than a thickness of the first protection layer.

### Claim 10

A reflective mask, comprising:
a substrate comprising a front side and a back side;
a conductive film on the back side of the substrate;
a reflective multilayer over the front side of the substrate;
a capping layer over the reflective multilayer;
an absorber layer over the capping layer and comprising a top surface, wherein the absorber layer comprises tantalum boride; and
a protection layer in direct contact with the top surface of the absorber layer,
wherein a nitrogen concentration of the protection layer is greater than a nitrogen concentration of the absorber layer.

### Claim 11 (depends on 10)

The reflective mask of claim 10, wherein a ratio of nitrogen to tantalum (N/Ta) in the protection layer is greater than or equal to 1.25.

### Claim 12 (depends on 10)

The reflective mask of claim 10, wherein the protection layer is less easily to be oxidized than the absorber layer.

### Claim 13 (depends on 10)

The reflective mask of claim 10, wherein the protection layer comprises a flat portion disposed directly on the absorber layer.

### Claim 14 (depends on 13)

The reflective mask of claim 13, wherein the protection layer comprises a vertical portion extending along a sidewall surface of the absorber layer.

### Claim 15 (depends on 10)

The reflective mask of claim 10, further comprising:
another reflective multilayer over the front side of the substrate and spaced apart from the reflective multilayer by a trench;
another capping layer over the another reflective multilayer;
another absorber layer over the another capping layer; and
another protection layer in direct contact with the top surface of the another absorber layer.

### Claim 16

A reflective mask, comprising:
a reflective multilayer disposed over a front side of a substrate;
a capping layer disposed over the reflective multilayer;
an absorber layer disposed over the capping layer and comprising a top surface and a sidewall surface; and
a protection layer comprises a first portion extending along the top surface of the absorber layer and a second portion extending along the sidewall surface of the absorber layer, and the second portion is spaced apart from the reflective multilayer by the capping layer,
wherein the absorber layer is formed of a first material and the protection layer is formed of a second material that is less easily to be oxidized than the first material.

### Claim 17 (depends on 16)

The reflective mask of claim 16, wherein a nitrogen concentration of the protection layer is greater than a nitrogen concentration of the absorber layer.

### Claim 18 (depends on 16)

The reflective mask of claim 16, wherein the absorber layer comprises tantalum boride.

### Claim 19 (depends on 16)

The reflective mask of claim 16, wherein a ratio of nitrogen to tantalum (N/Ta) in the protection layer is greater than or equal to 1.25.

### Claim 20 (depends on 16)

The reflective mask of claim 16, wherein a fluorine concentration of the protection layer is greater than a fluorine concentration of the absorber layer.