# US 11,906,677 B2 · Methods of recovering radiation detector > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,906,677 B2 - Document ID: US11906677B2 - Status: Granted - Kind: B2 - Application number: 17/684,887 - Filed: 2022-03-02 - Published: 2022-08-25 - Granted: 2024-02-20 - Earliest claimed: 2018-02-03 - Assignees: Shenzhen Xpectvision Technology Co., Ltd. - Applicants: Shenzhen Xpectvision Technology Co., Ltd. - Inventors: Peiyan Cao; Yurun Liu - Web page: https://patentgrep.com/patent/US11906677B2 ## CPC - G01T 1/24: with semiconductor detectors - G01T 1/247: {Detector read-out circuitry (for processing gain or off-set correction H04N)} - G01J 1/44: Electric circuits {(for command of an exposure part G03B7/02)} - G01T 1/17: Circuit arrangements not adapted to a particular type of detector {(pulse-selection circuits H03K, G01R)} - G06F 21/30: Authentication, i.e. establishing the identity or authorisation of security principals - H10F 39/1892: {Direct radiation image sensors} - H10F 39/1895: {of the hybrid type} - H10F 39/80373: {characterised by the gate of the transistor} - G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00) - G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N) - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract Disclosed herein is a method of recovering performance of a radiation detector, the radiation detector comprising: a radiation absorption layer configured to absorb radiation particles incident thereon and generate an electrical signal based on the radiation particles; an electronic system configured to process the electrical signal, the electronic system comprising a transistor, the transistor comprising a gate insulator with positive charge carriers accumulated therein due to exposure of the gate insulator to radiation; the method comprising: removing the positive charge carriers from the gate insulator by establishing an electric field across the gate insulator. ## Claims ### Claim 1 A method comprising: obtaining an electronic system comprising a transistor, the transistor comprising a gate insulator with positive charge carriers accumulated therein due to exposure of the gate insulator to radiation; and removing the positive charge carriers from the gate insulator by establishing an electric field across the gate insulator. ### Claim 2 (depends on 1) The method of claim 1, wherein removing the positive charge carriers comprises annealing the gate insulator. ### Claim 3 (depends on 1) The method of claim 1, further comprising: receiving a code; determining whether the code is valid; wherein the positive charge carriers are removed from the gate insulator only when the code is valid. ### Claim 4 (depends on 1) The method of claim 1, wherein the transistor comprises a gate electrode; wherein establishing the electric field comprises applying a bias voltage on the gate electrode. ### Claim 5 (depends on 4) The method of claim 4, wherein applying the bias voltage on the gate electrode comprises connecting the gate electrode to a voltage source. ### Claim 6 (depends on 4) The method of claim 4, wherein applying the bias voltage on the gate electrode comprises limiting the bias voltage by a limiter. ### Claim 7 (depends on 4) The method of claim 4, wherein the transistor comprises a source and a drain; wherein the bias voltage on the gate electrode is with respect to the source or the drain. ### Claim 8 (depends on 7) The method of claim 7, wherein the source and the drain are at a same electrical potential. ### Claim 9 (depends on 4) The method of claim 4, wherein the bias voltage has a magnitude below a breakdown voltage of the gate insulator. ### Claim 10 (depends on 4) The method of claim 4, wherein the bias voltage has a magnitude greater than 90% of a breakdown voltage of the gate insulator. ### Claim 11 (depends on 1) The method of claim 1, wherein the transistor is a MOSFET. ### Claim 12 An apparatus comprising: an electronic system comprising a transistor, the transistor comprising a gate insulator with positive charge carriers accumulated therein due to exposure of the gate insulator to radiation; and a processor configured to remove the positive charge carriers from the gate insulator by establishing an electric field across the gate insulator. ### Claim 13 (depends on 12) The apparatus of claim 12, wherein the processor is configured to remove the positive charge carriers from the gate insulator by annealing the gate insulator. ### Claim 14 (depends on 12) The apparatus of claim 12, wherein the processor is configured to receive a code, determine whether the code is valid, and remove the positive charge carriers from the gate insulator only when the code is valid. ### Claim 15 (depends on 12) The apparatus of claim 12, wherein the transistor comprises a gate electrode; wherein the processor is configured to remove the positive charge carriers from the gate insulator by establishing the electric field by applying a bias voltage on the gate electrode. ### Claim 16 (depends on 15) The apparatus of claim 15, wherein the processor is configured to apply the bias voltage with a magnitude greater than 90% of a breakdown voltage of the gate insulator. ### Claim 17 (depends on 12) The apparatus of claim 12, further comprising a heating element configured to heat the gate insulator.