# US 11,906,466 B2 · Measurement method and measurement system

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- Number: US 11,906,466 B2
- Document ID: US11906466B2
- Status: Granted
- Kind: B2
- Application number: 17/176,426
- Filed: 2021-02-16
- Published: 2021-08-26
- Granted: 2024-02-20
- Earliest claimed: 2020-02-26
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Takayuki Hatanaka; Tong Wu; Satoshi Nomura
- Web page: https://patentgrep.com/patent/US11906466B2

## CPC

- G01N 29/022: {Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices (microdevices per se B81B)}
- G01B 5/30: for measuring the deformation in a solid, e.g. mechanical strain gauge
- G01K 1/024: for remote indication
- G01K 1/026: {arrangements for monitoring a plurality of temperatures, e.g. by multiplexing}
- G01K 11/265: {using surface acoustic wave [SAW]}
- G01N 29/036: by measuring frequency or resonance of acoustic waves
- G01N 29/12: by measuring frequency or resonance of acoustic waves {(measuring frequency or resonant frequency of mechanical vibrations or acoustic waves in general G01H1/06, G01H3/04, G01H13/00; acoustic resonators G10K11/04; vibration or shock testing of structures G01M7/00)}
- G01N 29/2462: {Probes with waveguides, e.g. SAW devices}
- G01N 29/4436: {with a reference signal (amplitude comparison G01N29/48)}
- H01J 37/32917: {Plasma diagnostics}
- H10P 72/0421: {for drying etching}
- H10P 72/0602: {Temperature monitoring}
- G01N 2291/02881: Temperature
- G01N 2291/0423: Surface waves, e.g. Rayleigh waves, Love waves
- G01N 2291/106: one or more transducer arrays
- G01N 2291/2697: Wafer or (micro)electronic parts
- H01J 37/32091: {the radio frequency energy being capacitively coupled to the plasma}
- H01J 37/32715: {Workpiece holder}
- H01J 2237/2007: Holding mechanisms
- H01J 2237/24592: Inspection and quality control of devices
- H01J 2237/334: Etching
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- G01B: MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01K: MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR (radiation pyrometry G01J5/00)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A measurement method performed by a semiconductor manufacturing apparatus including a chamber is provided. In the measurement method, first measurement data including a signal of a resonance frequency of the chamber is acquired as reference data, in response to transmitting an electrical signal into the chamber while a jig capable of performing wireless communication is not placed in the chamber. Subsequently, second measurement data including the signal of the resonance frequency of the chamber and including a signal of a resonance frequency of a sensor installed in the jig is acquired, in response to transmitting an electrical signal into the chamber while the jig is placed in the chamber. By subtracting the reference data from the second measurement data, third measurement data is calculated.

## Claims

### Claim 1

A measurement method performed by an information processing apparatus in a semiconductor manufacturing apparatus including a chamber, the measurement method comprising:
a) acquiring, as reference data, first measurement data received by a reader antenna, the first measurement data including a signal of a resonance frequency of a resonant wave generated in the chamber in response to an electromagnetic wave transmitted from the reader antenna to the chamber, while a jig capable of performing wireless communication is not placed in the chamber;
b) acquiring second measurement data received by the reader antenna, the second measurement data including the signal of the resonance frequency of the resonant wave and including a signal of a resonance frequency of a sensor installed in the jig in response to the electromagnetic wave transmitted from the reader antenna to the chamber, while the jig is placed in the chamber;
c) calculating third measurement data by subtracting the reference data from the second measurement data acquired in b); and
d) estimating physical characteristics in the chamber based on the third measurement data,
wherein the jig is placed on a stage provided in the chamber; and
the physical characteristics include a temperature at the stage; and
wherein the sensor is provided with a plurality of sensor devices, each of the plurality of sensor devices having a resonance frequency different from each other;
the second measurement data acquired in b) includes signals of the resonance frequencies of the plurality of sensor devices; and
a temperature at each of the plurality of sensor devices is estimated in d), based on the resonance frequencies of the plurality of sensor devices that are detected from the third measurement data calculated in c).

### Claim 2 (depends on 1)

The measurement method according to claim 1, further comprising:
e) obtaining intensity of the signal of the resonance frequency of at least one sensor device of the plurality of sensor devices installed in the jig using the third measurement data calculated in c),
f) obtaining intensity of noise using the first measurement data acquired in a),
g) calculating a signal-to-noise (S/N) ratio that is a ratio of the intensity of the signal obtained in e) to the intensity of noise obtained in f);
h) determining whether the S/N ratio is greater than a predetermined threshold; and
i) estimating a temperature based on the signal of the resonance frequency of the at least one sensor device, in response to the S/N ratio being greater than the predetermined threshold.

### Claim 3 (depends on 1)

The measurement method according to claim 1, wherein the physical characteristics includes environmental information in the chamber.

### Claim 4

A measurement system comprising:
a semiconductor manufacturing apparatus including a chamber;
a jig in which a sensor is installed, the sensor being provided with a plurality of sensor devices, each of the plurality of sensor devices having a resonance frequency different from each other and the jig being capable of performing wireless communication;
a reader antenna; and
an information processing apparatus; wherein the measurement system is configured to perform processes of
a) receiving, by the reader antenna, first measurement data including a signal of a resonance frequency of a resonant wave generated in the chamber in response to an electromagnetic wave transmitted from the reader antenna to the chamber while the jig is not placed in the chamber;
b) acquiring, by the information processing apparatus, the first measurement data received by the reader antenna as reference data;
c) receiving, by the reader antenna, second measurement data including the signal of the resonance frequency of the resonant wave and including a signal of a resonance frequency of the sensor installed in the jig in response to the electromagnetic wave transmitted from the reader antenna to the chamber; while the jig is placed in the chamber;
d) acquiring, by the information processing apparatus, the second measurement data received by the reader antenna; and
e) subtracting, by the information processing apparatus, the reference data from the second measurement data acquired in d);
wherein the second measurement data acquired in c) includes signals of the resonance frequencies of the plurality of sensor devices; and
a temperature at each of the plurality of sensor devices is estimated based on the resonance frequencies of the plurality of sensor devices.

### Claim 5 (depends on 4)

The measurement system according to claim 4, wherein the jig is formed in a shape of a wafer.

### Claim 6 (depends on 4)

The measurement system according to claim 4, wherein
the jib includes a base formed of a silicon substrate; and
the plurality of sensor devices are installed on the base.