# US 11,906,457 B2 · Light-activated gas sensor based on 3D nanostructure operable at low temperature with high performance and method for manufacturing the same

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- Number: US 11,906,457 B2
- Document ID: US11906457B2
- Status: Granted
- Kind: B2
- Application number: 17/403,389
- Filed: 2021-08-16
- Published: 2022-02-24
- Granted: 2024-02-20
- Earliest claimed: 2020-08-18
- Assignees: Korea Advanced Institute of Science and Technology
- Applicants: Korea Advanced Institute of Science and Technology
- Inventors: Seokwoo Jeon; Donghwi Cho; Youngsuk Shim
- Web page: https://patentgrep.com/patent/US11906457B2

## CPC

- G01N 27/128: {Microapparatus}
- G01N 27/125: {Composition of the body, e.g. the composition of its sensitive layer}
- G01N 33/0027: {concerning the detector}
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)

## Abstract

A gas sensor includes a first electrode disposed on a substrate, a second electrode disposed on the substrate and spaced apart from the first electrode, and a sensitive member disposed on the substrate. The sensitive member contacts first and second electrodes and has a porous structure from a three-dimensional (3D) arrangement of shells including a gas-sensitive material. A thickness of the sensitive member is 5 μm to 10 μm, and a thickness of the shells is 10 nm to 40 nm.

## Claims

### Claim 1

A light-activated gas sensor comprising:
a first electrode disposed on a substrate;
a second electrode disposed on the substrate and spaced apart from the first electrode; and
a sensitive member disposed on the substrate and contacting the first and second electrodes and having a nano-shell structure with three-dimensional (3D) network shape, the nano-shell structure including a plurality of nano-shells respectively having a 3D layer shape to define and surround pores that are ordered with periodicity and connected to each other, the sensitive member including a metal oxide semiconductor as a gas-sensitive material,
wherein a thickness of the sensitive member is 5 μm to 10 μm, and a thickness of the shells is 10 nm to 40 nm.

### Claim 2 (depends on 1)

The light-activated gas sensor of claim 1, wherein the metal oxide semiconductor includes at least one of SnO2, ZnO, WO3, Fe2O3, Fe3O4, NiO, TiO2, CuO, In2O3, Zn2SnO4, Co3O4, PdO, LaCoO3, NiCo2O4, Ca2Mn3O8, V2O5, Ag2V4O11, Ag2O, MnO2, InTaO4, InTaO4, CaCu3Ti4O12, Ag3PO4, BaTiO3, NiTiO3, SrTiO3, Sr2Nb2O7, Sr2Ta2O7 and Ba0.5Sr0.5Co0.8Fe0.2O3-δ.

### Claim 3 (depends on 1)

The light-activated gas sensor of claim 1, wherein a porosity of the sensitive member is 90% or more.

### Claim 4 (depends on 1)

A detection system comprising:
a light-activated gas sensor of claim 1; and
a light source irradiating a light to the light-activated gas sensor to activate the sensitive member.