# US 11,906,365 B2 · Long-wave infrared sensor and electronic device including the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,906,365 B2 - Document ID: US11906365B2 - Status: Granted - Kind: B2 - Application number: 17/737,183 - Filed: 2022-05-05 - Published: 2023-04-20 - Granted: 2024-02-20 - Earliest claimed: 2021-10-15 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Byungkyu Lee; Jinmyoung Kim; Byonggwon Song; Yooseong Yang; Duhyun Lee; Hyuck Choo - Web page: https://patentgrep.com/patent/US11906365B2 ## CPC - G01J 5/20: using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices - G01J 5/58: using absorption; using extinction effect - G01J 5/045: {Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements (getter arrangements per se H10W76/48, H10P36/03)} - G01J 5/0806: Focusing or collimating elements, e.g. lenses or concave mirrors - G01J 5/0813: Planar mirrors; Parallel phase plates - G01J 5/10: using electric radiation detectors - H04N 5/33: Transforming infrared radiation (cameras or camera modules for generating image signals from infrared radiation H04N23/20; circuitry of SSIS for transforming infrared radiation into image signals H04N25/20) - G01J 2005/0077: {Imaging} - G01J 2005/106: {Arrays} - G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N) - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION ## Abstract Provided is a long-wave infrared (LWIR) sensor including a substrate, a magnetic resistance device on the substrate, and an LWIR absorption layer on the magnetic resistance device, wherein a resistance of the magnetic resistance device changes based on temperature, and wherein the LWIR absorption layer is configured to absorb LWIR rays and generate heat. ## Claims ### Claim 1 A long-wave infrared (LWIR) sensor comprising: a substrate; a magnetic resistance device on the substrate; and an LWIR absorption layer on the magnetic resistance device, the LWIR absorption layer being configured to absorb LWIR rays and generate heat, wherein a resistance of the magnetic resistance device changes based on temperature change based on the heat generated by the LWIR absorption layer. ### Claim 2 (depends on 1) The LWIR sensor of claim 1, wherein the magnetic resistance device comprises: a first magnetic layer; a second magnetic layer on the first magnetic layer; and a tunneling barrier layer between the first magnetic layer and the second magnetic layer. ### Claim 3 (depends on 1) The LWIR sensor of claim 1, wherein a thermal stability of the magnetic resistance device is less than 10. ### Claim 4 (depends on 1) The LWIR sensor of claim 1, wherein a width of the magnetic resistance device ranges from 1 nm to 100 nm. ### Claim 5 (depends on 1) The LWIR sensor of claim 1, further comprising a reflective layer provided between the substrate and the magnetic resistance device. ### Claim 6 (depends on 1) The LWIR sensor of claim 1, further comprising an insulating layer provided adjacent to a side surface of the magnetic resistance device. ### Claim 7 (depends on 1) The LWIR sensor of claim 1, further comprising a transmissive cap provided on the substrate, wherein the transmissive cap is provided on the magnetic resistance device and the LWIR absorption layer. ### Claim 8 (depends on 7) The LWIR sensor of claim 7, wherein an air pressure of an area inside of the transmissive cap is lower than an air pressure outside of the transmissive cap. ### Claim 9 (depends on 8) The LWIR sensor of claim 8, wherein the transmissive cap is configured to selectively transmit LWIR rays. ### Claim 10 (depends on 7) The LWIR sensor of claim 7, further comprising a focusing lens provided on a first side of the transmissive cap, the side being opposite to a second side of the transmission cap on which the LWIR absorption layer is provided. ### Claim 11 (depends on 10) The LWIR sensor of claim 10, wherein the focusing lens is configured to selectively transmit LWIR rays. ### Claim 12 A long-wave infrared (LWIR) sensor comprising: a plurality of pixels provided in a plurality of rows and a plurality of columns, wherein each of the plurality of pixels comprises: a substrate; a magnetic resistance device on the substrate; and an LWIR absorption layer on the magnetic resistance device, wherein a resistance of the magnetic resistance device changes based on temperature, and wherein the LWIR absorption layer is configured to absorb LWIR rays and emit heat. ### Claim 13 (depends on 12) The LWIR sensor of claim 12, wherein the magnetic resistance device comprises: a first magnetic layer; a second magnetic layer on the first magnetic layer; and a tunneling barrier layer between the first magnetic layer and the second magnetic layer. ### Claim 14 (depends on 13) The LWIR sensor of claim 13, wherein a thermal stability of the magnetic resistance device is less than 10. ### Claim 15 (depends on 12) The LWIR sensor of claim 12, wherein the plurality of pixels further comprise a plurality of transmissive caps, respectively, and wherein each of the plurality of transmissive caps is provided on the magnetic resistance device and the LWIR absorption layer. ### Claim 16 (depends on 15) The LWIR sensor of claim 15, wherein an air pressure of areas inside of the plurality of transmissive caps is lower than an air pressure outside of the plurality of transmissive caps. ### Claim 17 (depends on 12) The LWIR sensor of claim 12, wherein the plurality of pixels further comprise a plurality of focusing lenses, respectively, and wherein the plurality of focusing lenses face the plurality of transmissive caps, respectively. ### Claim 18 (depends on 12) The LWIR sensor of claim 12, wherein the plurality of pixels further comprise a plurality of reflective layers, respectively, and wherein each of the plurality of reflective layers is provided between the substrate and the magnetic resistance device. ### Claim 19 (depends on 12) The LWIR sensor of claim 12, wherein in each of the plurality of pixels, the magnetic resistance device is provided as a single magnetic resistance device or a plurality of magnetic resistance devices. ### Claim 20 An electronic device comprising: a long-wave infrared (LWIR) sensor; and a processor configured to receive a sensing signal from the LWIR sensor and process the sensing signal, wherein the LWIR sensor comprises: a substrate; a magnetic resistance device on the substrate; and an LWIR absorption layer on the magnetic resistance device, wherein a resistance of the magnetic resistance device changes based on temperature, and wherein the LWIR absorption layer is configured to absorb LWIR rays and emit heat.