Reducing junction resistance variation in two-step deposition processes

A method comprising:

• providing a dielectric substrate and a multi-layer resist structure on a surface of the dielectric substrate,
• wherein the multi-layer resist structure comprises a first resist layer including a first opening extending through a thickness of the first resist layer, a second resist layer including a second opening aligned over the first opening and extending through a thickness of the second resist layer, and a third resist layer including a third opening aligned over the second opening and extending through a thickness of the third resist layer,
• wherein the thickness of each of the first opening, the second opening and the third opening extend along a first direction normal to the surface of the dielectric substrate,
• each of the first opening, the second opening, and the third opening has a corresponding width that extends along a second direction that is orthogonal to the first direction, and
• a width of the second opening is less than a width of the first opening and less than a width of the third opening;
• depositing a first layer of material through the first opening, the second opening, and the third opening at a first deposition angle with respect to the surface of the dielectric substrate;
• and
• depositing a second layer of material through the first opening, the second opening, and the third opening at a second deposition angle with respect to the surface of the dielectric substrate,
• wherein a relative orientation between the surface of the dielectric substrate and a material deposition source is altered from a first position for the first layer deposition to a second position for the second layer deposition.