SOT-MRAM cell in high density applications
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing Yuan Song, Shy-Jay Lin
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Abstract
In some embodiments, the present disclosure relates to a memory device that includes a spin orbit torque (SOT) layer arranged over a substrate. A magnetic tunnel junction (MTJ) structure may be arranged over the SOT layer. The MTJ structure includes a free layer, a reference layer, and a diffusion barrier layer disposed between the free layer and the reference layer. A first conductive wire is arranged below the SOT layer and coupled to the SOT layer. A second conductive wire is arranged below the SOT layer and coupled to the SOT layer. A third conductive wire is arranged over the MTJ structure. The memory device further includes a first selector structure arranged between the first conductive wire and the SOT layer.
Claims20
A memory device comprising:
- a spin orbit torque (SOT) layer;
- a magnetic tunnel junction (MTJ) structure over the SOT layer;
- a first conductive wire below the SOT layer and coupled to the SOT layer;
- a second conductive wire over the MTJ structure;
- and
- a selector structure between the first conductive wire and the SOT layer;
- wherein the first and second conductive wires have individual lengths extending laterally in parallel, and wherein a bottommost surface of the selector structure overlies a topmost surface of the first conductive wire.
A memory device comprising:
- a spin orbit torque (SOT) layer;
- a magnetic tunnel junction (MTJ) structure over the SOT layer;
- a first conductive wire below the SOT layer and coupled to the SOT layer;
- a second conductive wire over the MTJ structure;
- and
- a selector structure between the MTJ structure and the second conductive wire.
A memory device comprising:
- a first spin orbit torque (SOT) layer;
- a first magnetic tunnel junction (MTJ) structure overlying the first SOT layer;
- a second SOT layer laterally spaced from the first SOT layer;
- a second MTJ structure overlying the second SOT layer;
- and
- a selector structure underlying and electrically coupled to the first and second SOT layers;
- wherein the first SOT layer, the first MTJ structure, and a first portion of the selector structure form a first memory cell, and wherein the second SOT layer, the second MTJ structure, and a second portion of the selector structure form a second memory cell.
Dependencies are inferred from the claim text.