Photoelectric conversion element and imaging device
AssigneeSony Group Corporation
InventorsMasashi Bando, Michinori Shiomi
Life of this patent
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Abstract
A photoelectric conversion element includes a first electrode including a plurality of electrodes independent from each other, a second electrode disposed to be opposed to the first electrode, an n-type photoelectric conversion layer including a semiconductor nanoparticle, and a semiconductor layer including an oxide semiconductor material. The semiconductor layer is provided between the first electrode and the n-type photoelectric conversion layer. The n-type photoelectric conversion layer is provided between the first electrode and the second electrode. A carrier density of the n-type photoelectric conversion layer is higher than a carrier density of the semiconductor layer.
Claims15
A photoelectric conversion element, comprising:
- a first electrode including a plurality of electrodes independent from each other;
- a second electrode disposed to be opposed to the first electrode;
- an n-type photoelectric conversion layer including a semiconductor nanoparticle, the n-type photoelectric conversion layer being provided between the first electrode and the second electrode;
- a semiconductor layer including an oxide semiconductor material, the semiconductor layer being provided between the first electrode and the n-type photoelectric conversion layer,
- wherein a carrier density of the n-type photoelectric conversion layer is higher than a carrier density of the semiconductor layer;
- and
- an insulation layer provided between the first electrode and the semiconductor layer,
- wherein the first electrode includes a charge readout electrode and a charge accumulation electrode, the charge readout electrode being electrically coupled to the n-type photoelectric conversion layer via an opening provided to the insulation layer, and the charge accumulation electrode being disposed to be opposed to the n-type photoelectric conversion layer with the insulation layer interposed therebetween.
An imaging device, comprising
- a plurality of pixels each provided with one or more photoelectric conversion elements, the one or more photoelectric conversion elements each including:
- a first electrode including a plurality of electrodes independent from each other,
- a second electrode disposed to be opposed to the first electrode,
- an n-type photoelectric conversion layer including a semiconductor nanoparticle, the n-type photoelectric conversion layer being provided between the first electrode and the second electrode,
- a semiconductor layer including an oxide semiconductor material, the semiconductor layer being provided between the first electrode and the n-type photoelectric conversion layer,
- wherein a carrier density of the n-type photoelectric conversion layer is higher than a carrier density of the semiconductor layer;
- and
- an insulation layer provided between the first electrode and the semiconductor layer,
- wherein the first electrode includes a charge readout electrode and a charge accumulation electrode, the charge readout electrode being electrically coupled to the n-type photoelectric conversion layer via an opening provided to the insulation layer, and the charge accumulation electrode being disposed to be opposed to the n-type photoelectric conversion layer with the insulation layer interposed therebetween.
Dependencies are inferred from the claim text.