Photodetectors based on two-dimensional quantum dots

A heterostructure photodetector comprising:

• a first electrode;
• a first photoabsorbing layer comprising a first photoabsorbing material;
• an interlayer disposed between the first electrode and the first photoabsorbing layer, wherein
• the interlayer is made of a metal oxide having zinc, titanium, vanadium or nickel, and
• the interlayer has a thickness ranging from about 100 nm to about 1000 nm;
• a second photoabsorbing layer disposed on the first photoabsorbing layer, the second photoabsorbing layer comprising a second photoabsorbing material;
• and
• a second electrode disposed on the second photoabsorbing layer, wherein
• the first photoabsorbing material is a plurality of two-dimensional (2D) nanosheets and the second photoabsorbing material is a plurality of 2D quantum dots (QDs), or
• the first photoabsorbing material is a plurality of 2D QDs and the second photoabsorbing material is a plurality of 2D nanosheets.