Electronic device and method for fabricating the same

An electronic device comprising a semiconductor memory, the semiconductor memory comprising:

• a substrate including a cell region, a first peripheral circuit region disposed at a first side of the cell region in a first direction, and a second peripheral circuit region disposed at a second side of the cell region in a second direction crossing the first direction;
• a plurality of first lines disposed over the substrate and extending in the first direction across the cell region and the first peripheral circuit region;
• a plurality of second lines disposed over the first lines and extending in the second direction across the cell region and the second peripheral circuit region;
• a contact plug disposed in the second peripheral circuit region and having an upper surface coupled to a second line of the second lines;
• a plurality of third lines disposed over the second lines and respectively overlapping the second lines;
• a plurality of fourth lines disposed over the third lines and respectively overlapping the first lines;
• a plurality of first memory cells disposed in the cell region and located at intersections of the first lines and the second lines between the first lines and the second lines;
• and
• a plurality of second memory cells disposed in the cell region and located at intersections of the third lines and the fourth lines between the third lines and the fourth lines,
• wherein a first portion of a third line of the third lines located in the cell region and a second portion of the third line located over the contact plug contact the second line, and
• at least a part of a remainder of the third line is spaced apart from the second line.