Ferroelectric memory device with a metal layer having a crystal orientation for improving ferroelectric polarization and method for forming the ferroelectric memory device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Chieh Huang, Hai-Ching Chen, Chung-Te Lin
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Abstract
An integrated chip including a semiconductor layer over a substrate. A pair of source/drains are arranged along the semiconductor layer. A first metal layer is over the substrate. A second metal layer is over the first metal layer. A ferroelectric layer is over the second metal layer. The first metal layer has a first crystal orientation and the second metal layer has a second crystal orientation different from the first crystal orientation.
Claims20
A method for forming an integrated chip, the method comprising:
- depositing a semiconductor layer over a substrate;
- forming a pair of source/drains along the semiconductor layer;
- performing a first type of deposition process to deposit a first metal over the substrate to form a first metal layer over the substrate;
- performing a second type of deposition process, different than the first type of deposition process, to deposit the first metal on the first metal layer to form a second metal layer on the first metal layer;
- and
- depositing a ferroelectric layer over the second metal layer,
- wherein the first metal of the second metal layer is deposited to have a [110] crystal orientation.
A method for forming an integrated chip, the method comprising:
- depositing a semiconductor layer over a substrate;
- forming a pair of source/drains along the semiconductor layer;
- depositing a first metal layer comprising a first metal over the substrate;
- depositing a second metal layer comprising the first metal on the first metal of the first metal layer;
- depositing a ferroelectric layer on the first metal of the second metal layer;
- depositing a third metal layer comprising the first metal on the ferroelectric layer;
- and
- depositing a fourth metal layer comprising the first metal on the first metal of the third metal layer,
- wherein the first metal layer and the third metal layer have a first crystal orientation and the second metal layer has a second crystal orientation, different from the first crystal orientation.
A method for forming an integrated chip, the method comprising:
- depositing a semiconductor layer over a substrate;
- forming a pair of source/drains along the semiconductor layer;
- depositing a first metal over the substrate by performing a first physical vapor deposition process to form a first metal layer having a first crystal orientation over the substrate;
- depositing the first metal on the first metal layer by performing a first atomic layer of deposition process, different than the first physical vapor deposition process, to form a second metal layer having a second crystal orientation, different than the first crystal orientation, on the first metal layer;
- and
- depositing a ferroelectric layer on the second metal layer.
Dependencies are inferred from the claim text.