Three-dimensional memory device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFeng-Cheng Yang, Meng-Han Lin, Sheng-Chen Wang, Han-Jong Chia, Chung-Te Lin
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Abstract
In accordance with embodiments, a memory array is formed with a multiple patterning process. In embodiments a first trench is formed within a multiple layer stack and a first conductive material is deposited into the first trench. After the depositing the first conductive material, a second trench is formed within the multiple layer stack, and a second conductive material is deposited into the second trench. The first conductive material and the second conductive material are etched.
Claims20
A semiconductor device comprising:
- a dielectric material surrounded by a semiconductor material;
- a ferroelectric material on an opposite side of the semiconductor material from the dielectric material;
- a first conductive element on an opposite side of the ferroelectric material;
- a first seed layer on an opposite side of the first conductive element from the ferroelectric material;
- a second seed layer in physical contact with the first seed layer;
- and
- a second conductive element on an opposite side of the second seed layer from the first seed layer.
A semiconductor device comprising:
- a first word line comprising:
- a first seed layer, the first seed layer having a first “U” shape;
- a second seed layer in physical contact with the first seed layer, the second seed layer having a second “U” shape;
- a first conductive feature in physical contact with the first seed layer;
- a second conductive feature in physical contact with the second seed layer;
- a ferroelectric material in physical contact with both the first seed layer and the first conductive feature;
- and
- a semiconductor strip adjacent to the ferroelectric material.
A semiconductor device comprising:
- a stack of word lines, wherein each word line comprises:
- multiple seed layers in physical contact with each other;
- multiple conductive elements on opposing sides of the multiple seed layers;
- ferroelectric materials adjacent to respective ones of each of the word lines within the stack of word lines;
- and
- semiconductor strips adjacent to respective ones of the ferroelectric materials.
Dependencies are inferred from the claim text.