Semiconductor memory device

Abstract

A semiconductor memory device includes: a first semiconductor layer extending in a first direction; a first conductive layer and a second conductive layer that are arranged in the first direction and each opposed to the first semiconductor layer; a first insulating portion disposed between the first semiconductor layer and the first conductive layer, the first insulating portion containing oxygen (O) and hafnium (Hf); a second insulating portion disposed between the first semiconductor layer and the second conductive layer, the second insulating portion containing oxygen (O) and hafnium (Hf); and a first charge storage layer disposed between the first insulating portion and the second insulating portion, the first charge storage layer being spaced from the first conductive layer and the second conductive layer.

Dependencies are inferred from the claim text.