Semiconductor memory device and method of manufacturing the same
AssigneeKioxia Corporation
InventorKyungmin Jang
Life of this patent
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Abstract
According to an embodiment, a semiconductor memory device includes a semiconductor substrate, a control circuit arranged on the semiconductor substrate, and a memory cell array arranged above the control circuit. The memory cell array includes a plurality of three-dimensionally-arranged memory cells, and is controlled by the control circuit. A first nitride layer is arranged between the control circuit and the memory cell array, and a second nitride layer is arranged between the control circuit and the first nitride layer.
Claims17
A semiconductor memory device, comprising:
- a semiconductor substrate;
- a transistor disposed on the semiconductor substrate;
- a stacked body disposed above the transistor, the stacked body including a plurality of first conductive layers stacked in a first direction, a pillar extending through the plurality of first conductive layers in the first direction and containing a semiconductor layer, and a charge storage film disposed between the plurality of first conductive layers and the semiconductor layer;
- a first nitride layer disposed above the transistor;
- a second nitride layer disposed in a position between the transistor and the first nitride layer in the first direction and having an etching rate different from an etching rate of the first nitride layer;
- and
- a conductor extending through the second nitride layer, the first nitride layer, and the plurality of first conductive layers in the first direction and electrically connected to the transistor.
A semiconductor memory device, comprising:
- a semiconductor substrate;
- a transistor disposed on the semiconductor substrate;
- a stacked body disposed above the transistor, the stacked body including a plurality of first conductive layers stacked in a first direction, a pillar extending through the plurality of first conductive layers in the first direction and containing a semiconductor layer, and a charge storage film disposed between the plurality of first conductive layers and the semiconductor layer;
- a first nitride layer disposed above the transistor;
- a second nitride layer disposed in a position between the transistor and the first nitride layer in the first direction and having a density different from a density of the first nitride layer;
- and
- a conductor extending through the second nitride layer, the first nitride layer, and the plurality of first conductive layers in the first direction and electrically connected to the transistor.
A semiconductor memory device, comprising:
- a semiconductor substrate;
- a transistor disposed on the semiconductor substrate;
- a stacked body disposed above the transistor, the stacked body including a plurality of first conductive layers stacked in a first direction, a pillar extending through the plurality of first conductive layers in the first direction and containing a semiconductor layer, and a charge storage film disposed between the plurality of first conductive layers and the semiconductor layer;
- a first nitride layer disposed above the transistor;
- a second nitride layer disposed in a position between the transistor and the first nitride layer in the first direction and having a content of hydrogen different from a content of hydrogen in the first nitride layer;
- and
- a conductor extending through the second nitride layer, the first nitride layer, and the plurality of first conductive layers in the first direction and electrically connected to the transistor.
Dependencies are inferred from the claim text.