Vertical semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorsHye-Hyeon Byeon, Sang-Deok Kim, Il-Young Kwon, Tae-Hong Gwon, Jin-Ho Bin
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Abstract
A vertical semiconductor device and a method for fabricating the same may include forming an alternating stack of dielectric layers and sacrificial layers over a lower structure, forming an opening by etching the alternating stack, forming a non-conformal blocking layer on the alternating stack in which the opening is formed, adsorbing a deposition inhibitor on a surface of the blocking layer to convert the non-conformal blocking layer into a conformal blocking layer on which the deposition inhibitor is adsorbed, and forming a charge storage layer on the conformal blocking layer.
Claims4
A vertical semiconductor device comprising:
- a lower structure;
- an alternating stack of dielectric layers and gate electrodes formed over the lower structure;
- an opening penetrating the alternating stack;
- a blocking layer formed on a sidewall of the opening;
- a charge storage layer formed on a sidewall of the blocking layer;
- and
- an adsorption layer comprising a deposition inhibitor,
- wherein the absorption layer is formed at an interface between the blocking layer and the charge storage layer.
Dependencies are inferred from the claim text.