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AssigneeYangtze Memory Technologies Co., Ltd.
InventorsKun Zhang, Haojie Song, Kun Bao, Zhiliang Xia
Estimating the term…
Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack, a channel structure, a channel local contact, a slit structure, and a staircase local contact. The memory stack includes interleaved conductive layers and dielectric layers above the substrate. The channel structure extends vertically through the memory stack. The channel local contact is above and in contact with the channel structure. The slit structure extends vertically through the memory stack. The staircase local contact is above and in contact with one of the conductive layers at a staircase structure on an edge of the memory stack. Upper ends of the channel local contact, the slit structure, and the staircase local contact are flush with one another.
A three-dimensional (3D) memory device, comprising:
A three-dimensional (3D) memory device, comprising:
Dependencies are inferred from the claim text.