US 11,903,203 B2 · 3D and flash memory device and method of fabricating the same

Abstract

A 3D AND flash memory device includes a gate stack structure, a channel pillar, a first and a second conductive pillars, a charge storage structure, and a protective cap. The gate stack structure is disposed on a dielectric substrate and includes gate layers and insulating layers alternately stacked with each other. The channel pillar penetrates through the gate stack structure. The first and the second conductive pillars are disposed in the channel pillar and penetrate through the gate stack structure, and the first and the second conductive pillars are separated from each other and each connected to the channel pillar. The charge storage structure is disposed between the gate layers and a sidewall of the channel pillar. The protective cap covers at least a top surface of the channel pillar and isolates the first conductive pillar and the second conductive pillar from a top gate layer of the gate layers.

Claims19

Dependent claims

A 3D AND flash memory device comprising:

a gate stack structure disposed on a dielectric substrate and comprising a plurality of gate layers and a plurality of insulating layers alternately stacked with each other;
a channel pillar disposed on the dielectric substrate and penetrating through the gate stack structure;
a first conductive pillar and a second conductive pillar disposed in the channel pillar and penetrating through the gate stack structure, wherein the first conductive pillar and the second conductive pillar are separated from each other and are each connected to the channel pillar;
a charge storage structure disposed between the gate layers and a sidewall of the channel pillar;
and
a protective cap covering at least a top surface of the channel pillar, isolating the first conductive pillar from a top gate layer of the plurality of gate layers, and isolating the second conductive pillar from the top gate layer of the plurality of gate layers.

3 more elements

A fabrication method of a 3D AND flash memory device, comprising:

forming a stack structure on a dielectric substrate, wherein the stack structure comprises a plurality of sacrificial layers and a plurality of insulating layers alternately stacked with each other;
forming an opening in the stack structure;
forming a channel pillar in the opening;
forming a protective cap on the channel pillar;
forming an insulating filling layer on the stack structure and the protective cap, and filling the insulating filling layer in the opening;
patterning the insulating filling layer with the protective cap covering on the channel pillar to form a first hole and a second hole in the channel pillar;
forming a first conductive pillar and a second conductive pillar connected to the channel pillar in the first hole and the second hole, respectively;
performing a replacement process to replace the sacrificial layers with a plurality of gate layers;
and
forming a charge storage structure between the gate layers and a sidewall of the channel pillar.

7 more elements

Dependencies are inferred from the claim text.

3D and flash memory device and method of fabricating the same

Life of this patent

3D and flash memory device and method of fabricating the same

Life of this patent

Abstract

Claims19