Integrated assemblies, and methods of forming integrated assemblies

A method of forming an integrated assembly, comprising:

• forming a first stack comprising a first layer, a second layer over the first layer, and a third layer over the second layer;
• the first and third layers comprising WSi, where the chemical formula indicates primary constituents rather than a specific stoichiometry;
• the second layer comprising TiN, where the chemical formula indicates primary constituents rather than a specific stoichiometry;
• forming a first opening to extend through second and third layers of the first stack;
• forming a liner within the first opening to line the first opening;
• the liner comprising a laminate configuration containing a second material over a first material, the first material comprising silicon dioxide and the second material comprising titanium nitride;
• forming a tungsten-containing plug within the lined first opening;
• forming a second stack over the first stack;
• the second stack having alternating first and second levels;
• forming a second opening to pass through the second stack and to the tungsten-containing plug;
• removing the tungsten-containing plug to extend the second opening;
• forming first semiconductor material within the extended second opening;
• forming a third opening to pass through the second stack, through the third layer, and to the second layer;
• lining upper portions of the sidewall surfaces of the third opening with protective material, and then removing the second layer to form a conduit;
• forming conductively-doped second semiconductor material within the conduit;
• out-diffusing dopant from the conductively-doped second semiconductor material into the first semiconductor material, the out-diffused dopant extending upwardly to at least one of the first levels;
• forming conductive material within the first levels;
• and
• forming insulative material within the third opening.