Through via structure, semiconductor device including the through via structure, and massive data storage system including the semiconductor device

A through via structure comprising:

• an insulating interlayer;
• a through via including a metal pattern extending through the insulating interlayer in a vertical direction, the metal pattern including a first metal and a gap fully enclosed in the metal pattern, wherein the metal pattern includes a seam extending vertically from the gap in the metal pattern, and wherein an etching gas used to form the metal pattern remains in the gap in the metal pattern,
• and
• a barrier pattern on a sidewall and a lower surface of the metal pattern, the barrier pattern including a nitride of a second metal;
• and
• a first capping pattern contacting an upper surface of the through via, the first capping pattern including at least one of a silicide of the first metal or a compound of the first metal and silicon nitride, the first capping pattern-including a lowermost edge portion, the lower most edge portion of the first capping pattern is not higher than a lowermost central portion of the first capping pattern.

A semiconductor device comprising:

• lower circuit patterns on a substrate;
• a common source plate (CSP) over the lower circuit patterns;
• a gate electrode structure on the CSP, the gate electrode structure including gate electrodes spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate, and each of the gate electrodes extending in a second direction parallel to the upper surface of the substrate;
• a memory channel structure extending through the gate electrode structure on the substrate and connected to the CSP, the memory channel structure including
• a channel extending in the vertical direction, and
• a charge storage structure surrounding an outer sidewall of the channel;
• and
• a through via structure including a through via having
• a metal pattern extending in the vertical direction and fully enclosing a gap in the metal pattern, wherein the metal pattern includes a seam extending vertically from the gap in the metal pattern, and wherein an etching gas used to form the metal pattern remains in the gap in the metal pattern,
• and
• a barrier pattern on a sidewall and a lower surface of the metal pattern, and
• a capping pattern contacting an upper surface of the through via, the capping pattern including a lowermost edge portion of the capping pattern, the lowermost edge portion is not higher than a lowermost surface of a central portion of the capping pattern.