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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPerng-Fei Yuh, Yih Wang, Meng-Sheng Chang, Jui-Che Tsai, Ku-Feng Lin, Yu-Wei Lin, Keh-Jeng Chang, Chansyun David Yang, Shao-Ting Wu, Shao-Yu Chou, Philex Ming-Yan Fan, Yoshitaka Yamauchi, Tzu-Hsien Yang
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The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.
A memory device, comprising:
A semiconductor device, comprising:
A method of operating a memory device, comprising:
Dependencies are inferred from the claim text.