Semiconductor devices

A semiconductor device comprising:

• a substrate including a cell region, a peripheral region, and a boundary region dividing the cell region from the peripheral region, wherein the boundary region has a boundary trench between the cell region from the peripheral region;
• cell active patterns on the cell region of the substrate;
• peripheral active patterns on the peripheral region of the substrate;
• a boundary insulating pattern disposed in the boundary trench and disposed between the cell active patterns and the peripheral active patterns;
• a bumper pattern disposed on the cell region of the substrate and extending along the boundary insulating pattern between the boundary insulating pattern and the cell active patterns;
• and
• word lines disposed on the cell region of the substrate, extending in a first direction, and spaced apart from each other in a second direction, the first and second directions parallel to a top surface of the substrate and crossing each other,
• wherein the bumper pattern has a line shape that extends in the second direction, and the word lines extend in the first direction to intersect the cell active patterns and the bumper pattern,
• wherein each of the word lines vertically overlaps the bumper pattern in a third direction perpendicular to the top surface of the substrate, and
• wherein a width of the bumper pattern in the first direction is greater than a width of each of the cell active patterns in the first direction.