Method for manufacturing semiconductor device with bit line contacts of different pitches

Abstract

A semiconductor device and method for manufacturing the same are provided. The method includes providing a substrate including a plurality of active areas separated from each other. In some embodiments, the method also includes forming first mask structures on the substrate. In some embodiments, the method further includes forming a first protective layer covering the first mask structures and the substrate. In some embodiments, the first protective layer defines an area exposing a portion of the first mask structures and the substrate, and the area defined by the first protective layer has a zigzag edge in a top view. In addition, the method includes performing a first etching process to remove a portion of the substrate exposed from the first mask structures and the first protective layer to form trenches.

Dependencies are inferred from the claim text.