Semiconductor structure and method for forming the same

A semiconductor structure, comprising:

• a substrate comprising a peripheral region and a memory region defined thereon;
• a first dielectric layer disposed on the substrate;
• a second dielectric layer disposed on the first dielectric layer;
• an opening on the peripheral region of the substrate and having a lower portion through the first dielectric layer and an upper portion through the second dielectric layer;
• a conductive layer disposed on the second dielectric layer at two sides of the opening;
• a contact structure disposed in the lower portion of the opening;
• a passivation layer covering a top surface of the contact structure, a sidewall of the second dielectric layer, and a sidewall of the conductive layer;
• a plurality of bit lines disposed on the memory region of the substrate;
• and
• a plurality of storage node contacts disposed on the substrate and between the bit lines, wherein a top surface of the conductive layer is flush with top surfaces of the storage node contacts.