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US 11,903,180 B2Granted
Method of manufacturing semiconductor device having word line structure
AssigneeNanya Technology Corporation
InventorsCheng-Yan Ji, Wei-Tong Chen
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Abstract
A method of manufacturing a semiconductor device is provided. The method includes providing a semiconductor substrate having a trench. The method also includes forming a first buffer layer in the trench. The method further includes forming a doped-polysilicon layer on the first buffer layer in the trench. The method also includes performing a thermal treatment on the doped-polysilicon layer.
Claims8
A method of manufacturing a semiconductor device, comprising:
- providing a semiconductor substrate having a trench;
- forming a first buffer layer in the trench;
- forming a doped-polysilicon layer on the first buffer layer in the trench;
- performing a thermal treatment on the doped-polysilicon layer;
- forming a second buffer layer on the doped-polysilicon layer prior to performing the thermal treatment;
- and
- forming a dielectric structure on the second buffer layer prior to performing the thermal treatment.
4 more elements
Dependencies are inferred from the claim text.