Method of manufacturing semiconductor structure having contact structure
AssigneeNanya Technology Corporation
InventorsChih-Ying Tsai, Jui-Seng Wang, Yi-Yi Chen
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Abstract
The present disclosure provides a method of manufacturing a semiconductor structure. The method includes providing a semiconductor substrate including an active region and an isolation structure. The method also includes forming a contact structure on the active region of the semiconductor substrate. The method further includes forming a dielectric spacer on opposite sides of the contact structure. The method also includes forming a conductive element on the isolation structure of the semiconductor substrate, wherein the dielectric spacer has a concave surface facing the conductive element.
Claims15
A method of manufacturing semiconductor structure, comprising:
- providing a semiconductor substrate;
- forming a contact structure on the semiconductor substrate, the contact structure having a first side and a second side opposite to the first side;
- and
- forming a dielectric spacer adjacent to the contact structure and having a first concave surface;
- forming a first conductive element on the semiconductor substrate, wherein the first conductive element is partially surrounded by the first concave surface of the dielectric spacer;
- wherein forming the dielectric spacer comprises:
- forming a first dielectric layer at the first side of the contact structure;
- and
- forming a second dielectric layer on the first dielectric layer, wherein the second dielectric layer has a U-shape structure from a top view perspective.
A method of manufacturing a semiconductor structure, comprising:
- providing a semiconductor substrate comprising an active region and an isolation structure;
- forming a contact structure on the active region of the semiconductor substrate;
- forming a dielectric spacer on opposite sides of the contact structure;
- forming a conductive element on the isolation structure of the semiconductor substrate, wherein the dielectric spacer has a concave surface facing the conductive element;
- forming a buffer material on the semiconductor substrate;
- forming a patterned mask layer on the buffer material, the patterned mask layer exposing a first region of the semiconductor substrate;
- removing a portion of the buffer material according to the patterned mask layer to form a buffer layer exposing the first region of the semiconductor substrate;
- and
- removing the patterned mask layer.
Dependencies are inferred from the claim text.