Structure for embedding and packaging multiple devices by layer and method for manufacturing same

A method for manufacturing a structure for embedding and packaging multiple devices by layer, the method comprising:

• (a) preparing a polymer supporting frame, the polymer supporting frame comprising a first insulating layer, a first conductive copper pillar layer penetrating the first insulating layer, and a first device placement mouth frame;
• (b) mounting a first device onto the top of the first device placement mouth frame, and forming a first packaging layer in a gap between the first device placement mouth frame and the first device;
• (c) forming a second circuit layer on the lower surface of the first insulating layer, and a fifth insulating layer on the upper surface of the first insulating layer, wherein the fifth insulating layer comprises a sixth circuit layer located in the lower surface of the fifth insulating layer and a third conductive copper pillar layer located on the sixth circuit layer, a terminal of the first device is communicated with the sixth circuit layer, and the sixth circuit layer and the second circuit layer are conductively connected through the first conductive copper pillar layer;
• (d) forming a first circuit layer on the upper surface of the fifth insulating layer, the first circuit layer comprising a first conductive circuit layer and a first sacrificial circuit layer, wherein the first conductive circuit layer and the sixth circuit layer are conductively connected through the third conductive copper pillar layer, and the positions of the first sacrificial circuit layer and the first device placement mouth frame in a longitudinal direction are the same;
• (e) forming a second copper pillar layer on the first circuit layer, the second copper pillar layer comprising a second conductive copper pillar layer and a second sacrificial copper pillar layer, wherein the second sacrificial copper pillar layer is located on the first sacrificial circuit layer;
• (f) laminating an insulating material on the first circuit layer and the second copper pillar layer, thinning the insulating material to expose the end of the second copper pillar layer to form a second insulating layer, and laminating the insulating material on the second circuit layer to form a third insulating layer;
• (g) etching the first sacrificial circuit layer and the second sacrificial copper pillar layer to form a second device placement mouth frame, wherein the second device placement mouth frame is vertically overlapped with the first device placement mouth frame;
• (h) mounting a second device and a third device onto the bottom of the second device placement mouth frame, and forming a second packaging layer on the upper surface of the second insulating layer, and in a gap between the second device placement mouth frame and the second device and in a gap between the second device placement mouth frame and the third device, wherein the first device is vertically overlapped with the second device and the third device in a layered manner;
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• (i) forming a third blind hole in the second packaging layer, forming a third via hole in the third blind hole, and forming a third circuit layer on the surface of the second packaging layer and the surface of the third via hole, wherein a terminal of the second device and a terminal of the third device are conductively connected to the third circuit layer respectively through the third via hole, and the first conductive circuit layer and the third circuit layer are conductively connected through the second conductive copper pillar layer and the third via hole.