Amplitude modulated pixel setup for high-speed readout of CMOS image sensors
AssigneeUTI Limited Partnership
InventorsDevin Atkin, Orly Yadid-Pecht, Ulian Shahnovich
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Abstract
An apparatus for increasing readout speed for Complimentary Metal Oxide Semiconductor (CMOS) image sensors. The apparatus is useful with CMOS image sensors in all high-tech industries and used to capture images digitally. Specifically, the apparatus provides a CMOS image sensor which employs an analog network-on-chip for increasing readout speed. The apparatus includes an array of carrier signal generators which are used to modulate the pixel exposure to allow all pixels to be read and discerned simultaneously.
Claims25
An apparatus for sensing an image, said apparatus comprising:
- a complementary metal oxide semiconductor (CMOS) sensor comprising an array of pixels with an intensity-based readout;
- and
- an analog network including at least one carrier generator operably coupled to said array of pixels,
- wherein each pixel in said array of pixels is fed with a carrier signal and wherein, for said each pixel, said carrier signal is modulated with a value representing an exposure of said each pixel,
- and wherein said pixels output a current, IPixel, in the form of
- IPixel=APhotodiode*sinCarrier(2πft+τ)+IOffset,
- where f is the frequency of the carrier, τ is the phase of the carrier, IOffset is a DC offset current, and t is time.
A method for sensing an image, said method comprising:
- providing a complementary metal oxide semiconductor (CMOS) sensor comprising an array of pixels having an intensity-based readout;
- and
- coupling said array with an analog network comprising at least one carrier generator,
- wherein each pixel in said array of pixels is fed with a carrier signal and wherein for said each pixel, said carrier signal is modulated with a value representing an exposure of said each pixel,
- and wherein said pixels output a current, IPixel, in the form of
- IPixel=APhotodiode*sinCarrier(2πft+τ)+IOffset
- where f is the frequency of the carrier, τ is the phase of the carrier, IOffset is a DC offset current, and t is time.
A system for sensing an image, the system comprising:
- a complementary metal oxide semiconductor (CMOS) sensor comprising an array of pixels, each pixel having an intensity-based output;
- a plurality of mixer circuit elements;
- and
- at least one bus line to which mixer circuit elements are coupled, each of said at least one bus line carrying a bus signal;
- wherein, for a plurality of said pixels, each pixel's output is mixed by one of said mixer circuit elements with a carrier signal such that said bus signal on said at least one bus line is a superposition of multiple pixel outputs modulated by said carrier signal, and wherein, for each pixel in said plurality of said pixels, said carrier signal is modulated with a value representing an exposure of said each pixel,
- and wherein said pixels output a current, IPixel, in the form of
- IPixel=APhotodiode*sinCarrier(2πft+τ)+IOffset,
- where f is the frequency of the carrier, τ is the phase of the carrier, IOffset is a DC offset current, and t is time.
Dependencies are inferred from the claim text.