Back to results
US 11,901,882 B2Granted
Gate drive circuit
AssigneeSansha Electric Manufacturing Company, Limited
InventorMasashi Fukai
Life of this patent
Estimating the term…
Abstract
In a gate drive circuit of which an N-channel MOSFET and a P-channel MOSFET are connected in a push-pull manner to amplify an input pulse signal and drive an output element, a temperature correction circuit is connected between gate terminals of the N-channel MOSFET and the P-channel MOSFET. The temperature correction circuit lowers each of gate voltages of the N-channel MOSFET and the P-channel MOSFET as ambient temperature rises.
Claims4
A gate drive circuit which drives an output element by amplifying an input pulse signal from a control board comprising:
- an N-channel MOSFET and a P-channel MOSFET which are connected in a push-pull to amplify the input pulse signal and whose connection point to each other is connected to the output element, and
- a temperature correction circuit which is connected to a gate of the P-channel MOSFET,
- wherein
- the N-channel MOSFET and the P-channel MOSFET have different thresholds (voltages) at turn-on at low temperatures (V(thL)) and at high temperatures (V(thH)), and
- the temperature correction circuit generates a voltage drop which varies as ambient temperature increases, receives the input pulse signal from the control board, and inputs the input pulse signal minus the voltage drop to the gate of the P-channel MOSFET.
2 more elements
Dependencies are inferred from the claim text.