Thin film bulk acoustic resonator and manufacturing process therefor
AssigneeJwl (Zhejiang) Semiconductor Co., Ltd.
InventorsLinping Li, Jinghao Sheng, Zhou Jiang
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AssigneeJwl (Zhejiang) Semiconductor Co., Ltd.
InventorsLinping Li, Jinghao Sheng, Zhou Jiang
Estimating the term…
A thin film bulk acoustic resonator and a method for manufacturing the same. The thin film bulk acoustic resonator comprises a bottom electrode layer, a piezoelectric layer, and a top electrode layer, which are disposed on a substrate in which an acoustic reflection structure is located, where a portion which is of the piezoelectric layer and corresponds to a boundary of the acoustic reflection structure is depolarized to form a depolarized portion. The method comprises providing a bottom electrode layer on a substrate to cover an acoustic reflection structure which is formed or to be formed on the substrate; providing a piezoelectric layer on the bottom electrode layer; depolarizing a portion, which is of the piezoelectric layer and corresponds to a boundary of the acoustic reflection structure, to form a depolarized portion; and providing a top electrode layer on the piezoelectric layer.
A thin film bulk acoustic wave resonator, comprising:
A method for manufacturing a thin film bulk acoustic wave resonator, comprising:
Dependencies are inferred from the claim text.