Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYuto Yakubo, Hitoshi Kunitake, Takayuki Ikeda
Life of this patent
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Abstract
A semiconductor device in which an increase in circuit area is inhibited is provided. The semiconductor device includes a first circuit layer and a second circuit layer over the first circuit layer; the first circuit layer includes a first transistor; the second circuit layer includes a second transistor; a gate of the second transistor is electrically connected to one of a source and a drain of the first transistor; a source and a drain of the second transistor are electrically connected to the other of the source and the drain of the first transistor; and a semiconductor layer of the second transistor contains a metal oxide.
Claims9
A semiconductor device comprising:
- a first circuit layer;
- and
- a second circuit layer over the first circuit layer,
- wherein the first circuit layer comprises a first transistor,
- wherein the second circuit layer comprises a second transistor,
- wherein a gate of the second transistor is electrically connected to one of a source and a drain of the first transistor,
- wherein a source and a drain of the second transistor are electrically connected to the other of the source and the drain of the first transistor, and
- wherein a semiconductor layer of the second transistor comprises a metal oxide.
A semiconductor device comprising:
- a first circuit comprising a first transistor;
- and
- a snubber circuit electrically connected to the first circuit,
- wherein a first terminal of the snubber circuit is electrically connected to one of a source and a drain of the first transistor,
- wherein a second terminal of the snubber circuit is electrically connected to the other of the source and the drain of the first transistor,
- wherein the snubber circuit comprises a MOS capacitor,
- wherein a first semiconductor layer of the MOS capacitor comprises a metal oxide, and
- wherein a second semiconductor layer of the first transistor comprises a material different from the first semiconductor layer.
A semiconductor device comprising:
- a first circuit layer;
- a second circuit layer over the first circuit layer;
- and
- a third circuit layer over the second circuit layer,
- wherein the second circuit layer comprises a first MOS capacitor electrically connected to the first circuit layer,
- wherein the third circuit layer comprises a second MOS capacitor connected in parallel to the first MOS capacitor, and
- wherein a semiconductor layer of the first MOS capacitor and a semiconductor layer of the second MOS capacitor comprise a metal oxide.
Dependencies are inferred from the claim text.