LED DBR structure with reduced photodegradation
AssigneeLumileds LLC
InventorsKen Shimizu, Hisashi Masui, Ted Wangensteen
Life of this patent
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Abstract
A distributed Bragg reflector (DBR) structure on a substrate includes a high refractive index layer comprising titanium oxide (TiO2) and a low refractive index layer having a high carbon region and at least one low carbon region that contacts the high refractive index layer. Multiple layers of the high refractive index layer and the low refractive index layer are stacked. Typically, the multiple layers of the high refractive index layer and the low refractive index layer are stacked to a thickness of less than 10 microns. Each of the respective layers of the high refractive index layer and the low refractive index layer have a thickness of less than 0.2 microns.
Claims20
A light emitting diode (LED) device comprising:
- a substrate;
- a semiconductor diode structure on the substrate and comprising a first light output surface oppositely positioned from the substrate;
- and
- a DBR structure on the substrate, the DBR structure comprising:
- a high refractive index layer comprising titanium oxide (TiO2);
- and
- a low refractive index layer having a high carbon region and at least one low carbon region that contacts the high refractive index layer.
A light emitting diode (LED) array comprising:
- a substrate;
- a plurality of LEDs, each of the LEDs comprising:
- a semiconductor diode structure on the substrate and comprising a first light output surface oppositely positioned from the substrate;
- one or more DBR structures on the substrate, the one or more DBR structures comprising:
- a high refractive index layer comprising titanium oxide (TiO2);
- and
- a low refractive index layer having a high carbon region and at least one low carbon region that contacts the high refractive index layer.
A light emitting diode (LED) device comprising:
- a substrate comprising sapphire;
- a semiconductor diode structure on the substrate and comprising a first light output surface oppositely positioned from the substrate;
- a DBR structure on the substrate adjacent to the semiconductor diode structure, the DBR structure comprising:
- a high refractive index layer comprising titanium oxide (TiO2);
- and
- a low refractive index layer having a high carbon region and at least one low carbon region that contacts the high refractive index layer, the high carbon region formed from a different precursor than the low carbon region, the high carbon region and the low carbon region comprising a same chemical compound.
Dependencies are inferred from the claim text.