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US 11,901,692 B2Granted
Wafer-level etched facet for perpendicular coupling of light from a semiconductor laser device
AssigneeSkorpios Technologies, Inc.
InventorsMurtaza Askari, Stephen B. Krasulick, Majid Sodagar, John Zyskind
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Abstract
A semiconductor laser device is provided. The semiconductor laser device includes: a substrate having a first facet; a guiding layer having a second facet through which an output light is configured to be emitted; a bottom dielectric layer between the substrate and the guiding layer; and a top dielectric layer on the guiding layer. The second facet is at an angle relative to the first facet.
Claims7
A method for fabrication a semiconductor device, comprising:
- receiving a semiconductor structure comprising a guiding layer and a substrate;
- etching the guiding layer to form a first facet through which an output light is configured to be emitted;
- depositing a coating on the first facet;
- and
- singulating the substrate to form a second facet, after depositing the coating on the first facet, wherein the first facet is at an angle relative to the second facet of the substrate.
2 more elements
Dependencies are inferred from the claim text.