Semiconductor devices incorporating quantum dots

A semiconductor device, comprising:

• a light-emitting structure comprising a first light-emitting device, a second light-emitting device, and a third light-emitting device;
• and
• a light-conversion device comprising a plurality of nanoporous structures separated by a plurality of trenches, wherein a first plurality of quantum dots is placed in a first nanoporous structure of the plurality of nanoporous structures, wherein a second plurality of quantum dots is placed in a second nanoporous structure of the plurality of nanoporous structures, wherein the first plurality of quantum dots converts light produced by the first light-emitting device into light of a first color, wherein the second plurality of quantum dots converts light produced by the second light-emitting device into light of a second color, and wherein the third light-emitting device emits light of a third color.