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US 11,901,489 B2Granted
Electrode structure and semiconductor light-emitting device
AssigneeRohm Co., Ltd.
InventorsRyosuke Ishimaru, Yohei Ito, Yasuo Nakanishi
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Abstract
An electrode structure includes: an indium tin oxide (ITO) electrode that includes ITO; an Al electrode that includes Al and covers the ITO electrode; and a barrier electrode that includes at least one of TiN and Cr and is interposed in a region between the ITO electrode and the Al electrode.
Claims11
An electrode structure comprising:
- an indium tin oxide (ITO) electrode including ITO;
- an Al electrode including Al and covering the ITO electrode;
- and
- a barrier electrode including at least one of TiN and Cr and interposed in a region between the ITO electrode and the Al electrode,
- wherein the barrier electrode includes a first region and a second region drawn out from the first region to surround a periphery of the Al electrode in a plan view,
- wherein the first region has a first surface in contact with the Al electrode, and
- wherein the second region has a second surface that extends to be flush with the first surface.
4 more elements
Dependencies are inferred from the claim text.