Ultrathin solid state dies and methods of manufacturing the same
AssigneeMicron Technology, Inc.
InventorsVladimir Odnoblyudov, Martin F. Schubert
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Abstract
Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.
Claims20
A solid state transducer (SST) die, comprising:
- a growth substrate;
- a continuous layer of a first semiconductor material coupled to the growth substrate;
- a plurality of SST structures on the growth substrate, each SST structure including:
- a portion of the continuous layer of the first semiconductor material,
- a second semiconductor material, and
- a light emitting material between the portion of the continuous layer of the first semiconductor material and the second semiconductor material;
- a first contact in contact with the continuous layer of the first semiconductor material;
- and
- a second contact in contact with the second semiconductor material of each of the plurality of SST structures,
- wherein the growth substrate includes a plurality of openings, each opening aligned with the light emitting material of a corresponding one of the plurality of SST structures.
A solid state transducer (SST) die, comprising:
- a growth substrate comprising a plurality of openings;
- a continuous layer of a first semiconductor material coupled to the growth substrate and extending over the plurality of openings;
- a plurality of SST structures on the growth substrate, each SST structure aligned with a corresponding one of the plurality of openings and including:
- a portion of the continuous layer of the first semiconductor material,
- a second semiconductor material, and
- a light emitting material between the portion of the continuous layer of the first semiconductor material and the second semiconductor material;
- a first contact in contact with the continuous layer of the first semiconductor material;
- and
- a second contact in contact with the second semiconductor material of each of the plurality of SST structures.
Dependencies are inferred from the claim text.