Methods and systems for UV LED structures
AssigneeApplied Materials, Inc.
InventorsZihao Yang, Mengnan Zou, Mingwei Zhu, David Masayuki Ishikawa, Nag Patibandla
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Abstract
Exemplary processing methods of forming an LED structure may include depositing an aluminum nitride layer on a substrate via a physical vapor deposition process. The methods may include heating the aluminum nitride layer to a temperature greater than or about 1500° C. The methods may include forming an ultraviolet light emitting diode structure overlying the aluminum nitride layer utilizing a metal-organic chemical vapor deposition or molecular beam epitaxy.
Claims17
A method of forming an LED structure, the method comprising:
- depositing an aluminum nitride layer on a substrate via a physical vapor deposition process;
- transferring the substrate to a carrier subsequent to depositing the aluminum nitride layer, wherein a first cover wafer is disposed overlying the substrate on the carrier, a second cover wafer is disposed underlying the substrate on the carrier, and each of the first cover wafer and the second cover wafer comprises a substrate having an aluminum nitride layer;
- heating the aluminum nitride layer to a temperature greater than or about 1500° C.;
- and
- forming an ultraviolet light emitting diode (“LED”) structure overlying the aluminum nitride layer utilizing a metal-organic chemical vapor deposition or molecular beam epitaxy.
A method of forming an LED structure, the method comprising:
- depositing an aluminum nitride layer on a first substrate and a second substrate via a physical vapor deposition process;
- forming an ultraviolet light emitting diode structure overlying the aluminum nitride layer;
- positioning the first substrate face down in a carrier on a first cover wafer;
- positioning the second substrate face down in contact with the first substrate;
- positioning a second cover wafer overlying the second substrate on the carrier;
- and
- heating the first substrate and the second substrate to a temperature greater than or about 1500° C.
A method of forming an LED structure, the method comprising:
- depositing an aluminum nitride layer on a substrate via a physical vapor deposition process;
- positioning the substrate face down overlying a first cover wafer positioned in a earner;
- positioning a second cover wafer overlying the substrate;
- heating the aluminum nitride layer to a temperature greater than or about 1500° C.;
- and
- forming an ultraviolet light emitting diode (“LED”) structure overlying the aluminum nitride layer utilizing a metal-organic chemical vapor deposition or molecular beam epitaxy.
Dependencies are inferred from the claim text.