Optoelectronic semiconductor structure comprising a p-type injection layer based on InGaN
AssigneeSoitec
InventorMariia Rozhavskaia
Life of this patent
Estimating the term…
Abstract
An optoelectronic semiconductor structure (SC) comprises an active InGaN-based layer disposed between an n-type injection layer and a p-type injection layer, the active p-type injection layer comprising a first InGaN layer and, disposed on the first layer, a second layer composed of a plurality of AlGaInN elemental layers, each elemental layer having a thickness less than its critical relaxation thickness, two successive elemental layers having different aluminum and/or indium and/or gallium compositions.
Claims12
An optoelectronic semiconductor structure comprising an active InGaN-based layer disposed between an n-type injection layer and a p-type injection layer, the p-type injection layer comprising a first InGaN layer having a thickness ranging from 50 nm to 300 nm and, disposed on the first InGaN layer, a second layer composed of a plurality of AlGaInN elemental layers, each elemental layer having a thickness less than its critical relaxation thickness, two successive elemental layers having different aluminum and/or indium and/or gallium compositions.
Dependencies are inferred from the claim text.