Light absorbing barrier for LED fabrication processes

A semiconductor processing method comprising:

• forming a group of LED structures on a substrate layer to form a patterned LED substrate, wherein each LED structure of the group of LED structures includes contact pads;
• forming a light absorption barrier on the patterned LED substrate, wherein forming the light absorption barrier leaves exposed at least a portion of the contact pads, and the light absorption barrier is operable to absorb greater than or about 50% of light at wavelengths shorter than or about 300 nm;
• forming a reflective layer on the light absorption barrier, wherein the light absorption barrier is between the LED structures and the reflective layer, the reflective layer is operable to reflect light emitted from the LED structures that passes through the light absorption barrier, and forming the reflective layer exposes the at least a portion of the contact pads:
• exposing the patterned LED substrate to light, wherein the light is absorbed by surfaces of the LED structures in contact with the substrate layer and the light absorption layer;
• and
• separating the LED structures from the substrate layer, wherein bonding between the LED structures and the substrate layer has been weakened by the absorption of the light by the surfaces of the LED structures in contact with the substrate layer.