Thin film transistor comprising oxide semiconductor layer and silicon semiconductor layer and display apparatus comprising the same

A thin film transistor comprising:

• an active layer;
• and
• a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer,
• wherein the active layer includes:
• a silicon semiconductor layer;
• and
• an oxide semiconductor layer which contacts the silicon semiconductor layer,
• wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode,
• wherein a lateral surface of the oxide semiconductor layer contacts a lateral surface of the silicon semiconductor layer, and
• wherein an entire area of a contact portion where the silicon semiconductor layer and the oxide semiconductor layer contact each other is overlapped with the gate electrode.