Method of fabricating semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorGeorgios Vellianitis
Life of this patent
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Abstract
A method of fabricating a semiconductor device is described. A first material layer is formed, wherein the first material layer contains crystalline aluminum nitride or aluminum scandium nitride (AlScN) with a first Sc content. A second material layer is formed on the first material layer, wherein the second material layer contains aluminum scandium nitride (AlScN) with a second Sc content higher than the first Sc content. A third material layer is formed on the second material layer, wherein the third material layer contains aluminum scandium (AlSc).
Claims20
A method of fabricating a semiconductor device, comprising:
- forming a first material layer, wherein the first material layer contains crystalline aluminum nitride or aluminum scandium nitride (AlScN) with a first Sc content;
- forming a second material layer on the first material layer, wherein the second material layer contains aluminum scandium nitride (AlScN) with a second Sc content higher than the first Sc content;
- and
- forming a third material layer on the second material layer, wherein the third material layer contains aluminum scandium (AlSc).
A method of fabricating a semiconductor device, comprising:
- placing a base material in a reaction chamber;
- forming a crystalline first material layer containing a first material on the base material in-situ in the reaction chamber, wherein the first material is crystalline aluminum nitride or aluminum scandium nitride (AlScN) with a first Sc content;
- forming a crystalline ferroelectric layer containing a second material on the crystalline first material layer in-situ in the reaction chamber, wherein the second material is aluminum scandium nitride (AlScN) with a second Sc content, and the second Sc content is higher than the first Sc content;
- and
- forming a metallic gate layer containing a third material on the crystalline ferroelectric layer in-situ in the reaction chamber, wherein the third material is aluminum scandium (AlSc).
A method of fabricating a semiconductor device, comprising:
- forming a crystalline channel layer, wherein the crystalline channel layer includes an aluminum scandium nitride layer having a scandium (Sc) content less than about 22%;
- forming a ferroelectric layer on the crystalline channel layer, wherein the ferroelectric layer is in contact with the crystalline channel layer and contains scandium;
- and
- forming a metallic gate layer on the ferroelectric layer, wherein the metallic gate layer contains scandium (Sc) and aluminum.
Dependencies are inferred from the claim text.