Ferroelectric structure for semiconductor devices

A method, comprising:

• forming a fin;
• forming first and second spacers on the fin;
• depositing an amorphous dielectric layer on an interface layer, comprising:
• depositing a first portion of the amorphous dielectric layer on a top surface of the fin;
• and
• depositing a second portion of the amorphous dielectric layer on the top surface of the fin and on sidewalls of the first and second spacers;
• and
• performing a plasma treatment on the amorphous dielectric layer, wherein the plasma treatment converts the first portion of the amorphous dielectric layer into a crystalline dielectric layer.

A method, comprising:

• forming a fin;
• forming first and second spacers on the fin;
• depositing an amorphous dielectric layer, comprising:
• depositing a first portion of the amorphous dielectric layer on the fin;
• and
• depositing a second portion of the amorphous dielectric layer on sidewalls of the first and second spacers;
• converting, by a plasma treatment on the amorphous layer, the first portion of the amorphous dielectric layer into a crystalline dielectric layer;
• and
• forming a gate electrode on the crystalline dielectric layer and the second portion of the amorphous dielectric layer.