US 11,901,441 B2 · Fin field-effect transistor and method of forming the same

Abstract

A method for manufacturing a semiconductor device includes forming a gate trench over a semiconductor fin, the gate trench including an upper portion and a lower portion. The method includes sequentially forming one or more work function layers, a capping layer, and a glue layer over the gate trench. The glue layer includes a first sub-layer and a second sub-layer that have respective different etching rates with respect to an etching solution. The method includes removing the second sub-layer while leaving a first portion of the first sub-layer filled in the lower portion of the gate trench.

Claims20

Dependent claims

A method, comprising:

forming a gate trench over a semiconductor fin, the gate trench including a top portion over a bottom portion that is narrower than the top portion;
depositing a glue layer in the gate trench, the glue layer including a second sub-layer over a first sub-layer, wherein the first and the second sub-layers differ in composition, and wherein a portion of the first sub-layer completely fills the bottom portion of the gate trench;
and
removing a portion of the glue layer from the top portion of the gate trench to expose the portion of the first sub-layer in the bottom portion of the gate trench.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

18/167,402Filed 10 Feb 2023 · continuation

Priority

14 Oct 2020

Published

US 2023/0187543 A115 Jun 2023

Granted

13 Feb 2024

Term ends

Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10D 30/024
Of FETs having insulated gates [IGFET]: of fin field-effect transistors [FinFET]
H10D 30/0243
Of fin field-effect transistors [FinFET]: using dummy structures having essentially the same shapes as the semiconductor bodies, e.g. to provide…
H10D 30/6211
Fin field-effect transistors [FinFET]: having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
H10D 64/015
Manufacture or treatment: removing at least parts of gate spacers, e.g. disposable spacers

Family

Application17/070,634Parent of this continuation · filed 14 Oct 2020

US 2023/0187543 A1Pre-grant publication · published 15 Jun 2023

US 11,588,041 B2Parent of this continuation

US 2022/0115519 A1Published application

US 11,901,441 B2This patent

From the US filing history. Foreign family members aren’t listed.

Fin field-effect transistor and method of forming the same

Life of this patent

Fin field-effect transistor and method of forming the same

Life of this patent

Abstract

Claims20